PAM XIAMEN offers 4″FZ Prime Silicon Wafer.
Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm,
FZ Intrinsic undoped Si:-[111]±0.5°, Ro > 10,000 Ohmcm,
TTV<5μm, Bow<20μm, Warp<30μm,
One-side-Epi-Ready-polished, back-side etched, SEMI Flats,
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000μs.
For more information, please visit our [...]
2019-07-04meta-author
PAM-XIAMEN offers GaN on Si HEMT wafer for Power, D-mode. Because of the heterojunction structure of GaN and AlGaN, the GaN HEMT on Si Substrate structure has one important property of high electron mobility. The HEMT Si wafers can be for device fabrication as well as [...]
2019-05-17meta-author
PAM XIAMEN offers Single crystal TeO2.
TeO2 (110) 10x10x0.5mm, 1sp
TeO2 (001) 5x5x0.3mm, 2sp
TeO2 (110) 10x10x0.5mm, 2sp
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is [...]
2019-05-20meta-author
A novel method for estimating threshold voltage shifts of n-channel SiC MOSFETs under negative gate bias stresses has been proposed. In the proposed method, n-type SiC MOS capacitors were utilized instead of n-channel SiC MOSFETs. The n-type SiC MOS capacitors were exposed to ultraviolet [...]
2019-10-21meta-author
PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2383
n–type Si:P
[111] ±0.5°
4″
630
P/G
FZ >7,000
SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Back–side Fine Ground
PAM2384
n–type Si:P
[111] ±0.5°
4″
675
P/E
FZ >7,000
SEMI, 1Flat, Lifetime>1,600μs, in Empak cassettes of 6 and 8 wafers
PAM2385
n–type Si:P
[111] ±0.5°
4″
675
P/E
FZ [...]
2019-02-19meta-author
High-quality sapphire wafers are available from 2 inch to 8 inch with A, C, M or R plane. Monocrystal sapphire wafer is a very difficult material to process, so it is often used as a material for optoelectronic components. At present, the quality of [...]
2019-03-11meta-author