PAM-XIAMEN offers CZT Preamplifier.
PAMMA-01A is a single channel CZT preamplifier. It featured low noise, high gain and charge sensitivity. Signals of semiconductor detectors and other detectors (scintillator, gas, etc.) could be readout by it. Charge sensitive pre-amplifier can be used to test the energy [...]
2020-12-10meta-author
PAM-XIAMEN supplies 6 inch c-doped semi-insulating GaAs substrates, which are prime grade and mechanical grade grown by VGF. For wafer details, please view specifications listed below:
1. Prime Grade C-doped Semi-insulating GaAs
PAM220704-GaAs-Un
Parameter
GaAs-Un-6in-625um-PP
UOM
Growth method
VGF
Grade
Prime grade (Epi-ready)
Dopant
C doped
Orientation
(100) ±0.5°
Orientation Angle
N/A
°
Diameter
150.0±0.2
mm
Thickness
625±25 [...]
2022-07-04meta-author
Three decorative LED luminaires from Acuity Brands were selected to receive a 2016 Lighting for Tomorrow (LFT) award. The annual competition was created in 2002 to recognize the best decorative, energy-efficient luminaires in the market, and is organized by the American Lighting Association, the Consortium for Energy Efficiency [...]
2016-09-14meta-author
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade.
Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
2019-05-20meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211] ±0.5°
3″
1016
P/P
FZ 25-75
Prime
n-type Si:P
[211] ±0.5°
3″
1016
P/P
FZ 25-75
Prime
n-type Si:P
[211] ±0.5°
3″
1016
P/P
FZ 25-75
SEMI TESt
n-type Si:P
[111] ±0.5°
3″
415 ±15
E/E
FZ 10,000-12,000
SEMI Prime, Lifetime>1,500μs
n-type Si:P
[111] ±0.5°
3″
415 ±15
BROKEN
FZ 10,000-12,000
Broken E/E wafers, in two pieces, Lifetime>1,500μs,
n-type Si:P
[111] ±0.5°
3″
2500
C/C
FZ 7,000-13,000
SEMI, Individual cst
n-type Si:P
[111] ±0.5°
3″
370
P/E
FZ >5,000
SEMI [...]
2019-03-06meta-author
PAM XIAMEN offers Cleaving Silicon Wafer, which is cut by multi-wire cutting technology. Here is the cleaving silicon wafer specs:
Cleaving (100) silicon wafers
Cleaving (111) silicon wafers
Here comes a question: how to cleave a silicon wafer? At present, the silicon wafer cleaving technology mostly adopts the [...]
2019-02-22meta-author