PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 3″ 1800 P/P 1-5 SEMI Prime, Individual cst n-type Si:P [100] 3″ 5000 P/E 1-30 Prime, NO Flats, Individual cst n-type Si:Sb [100] 3″ 800 P/E 0.022-0.028 SEMI Prime n-type Si:Sb [100] 3″ 380 P/E 0.021-0.023 SEMI Prime n-type Si:Sb [100] 3″ 500 P/E 0.021-0.022 SEMI Prime n-type Si:As [100] 3″ 1000 P/E 0.001-0.005 SEMI Prime n-type Si:P [211] 3″ 450 P/P 50-65 SEMI Prime n-type Si:P [111-4°] 3″ 250 P/E 50-220 Prime, NO Flatst n-type Si:P [111] 3″ 10000 P/E 20-60 SEMI Prime, Individual cst n-type Si:P [111-3°] 3″ 380 P/E 19-25 SEMI Prime n-type Si:P [111-0.5° towards[110]] ±0.25° 3″ 1400 P/E >5 SEMI Prime, hard cst, LaserMark n-type Si:P [111] 3″ 6000 P/E 5-10 SEMI Prime, Individual cst n-type Si:P [111] 3″ 525 P/E 4.5-5.0 SEMI Prime n-type Si:P [111] 3″ 500 P/P 4-6 Prime, NO [...]
2019-03-06meta-author
The carrier concentration and thickness of n-type GaAs epitaxial layers were obtained by cell voltage measurements in anodization, and the results are compared with those obtained by differential C-V measurements. The carrier concentrations in the epi-layer are within the order of those obtained by [...]
2019-08-12meta-author
PAM XIAMEN offers LD Bare Bar for 940nm@cavity 3mm. Brand: PAM-XIAMEN Wavelength: 940nm Filling Factor: 50% Output Power: 200W Cavity Length:3mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
Due to its excellent electrical, thermal, and radiation resistance, silicon carbide has become a potential material for applications in high-frequency, high-power, and strong radiation environments. MOS capacitors are an important means of studying semiconductor surfaces and interfaces, as well as the basic structure of [...]
2023-03-17meta-author
PAM XIAMEN offers 4″CZ Prime Silicon wafer-16 4″ CZ Silicon Wafer SSP Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm, SEMI Flats (two), p-type Si:B[100]±0.5°, Ro=(0.001-0.002)Ohmcm, One-side-polished, back-side Alkaline etched, TTV<5μm, Bow/Warp<30μm, Wafers free of striation marks, Sealed in Empak or equivalent cassette. For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-01-06meta-author
Sublimation epitaxy under vacuum (SEV) was investigated as a method for growing 4H-SiC epitaxial structures for p–i–n diode fabrication. The SEV-grown 4H-SiC material was investigated with scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction, photo-luminescence spectroscopy (PL), cathodo-luminescence (CL) spectroscopy, photocurrent method [...]
2019-12-02meta-author