PAM XIAMEN offers 3″ FZ Silicon Wafer Thickness:229-249μm.
3″ Si FZ
Diameter 76-76.6mm
Thickness 229-249μm
Resistivity 53-60Ωcm
TTV ≤10μm
RRG ≤ 7%
front and back sides acid etched
about 1.5mil is etched from the surfaces in order to remove any surface damage
1.5mil = [...]
2019-08-22meta-author
High-quality sapphire wafers are available from 2 inch to 8 inch with A, C, M or R plane. Monocrystal sapphire wafer is a very difficult material to process, so it is often used as a material for optoelectronic components. At present, the quality of [...]
2019-03-11meta-author
PAM-XIAMEN offers M Plane N-GaN Freestanding GaN Substrate:
Item
PAM-FS-GAN M-N
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
M plane (1-100) off angle toward A-axis 0 ±0.5°
M plane (1-100) off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-17meta-author
PAM-XIAMEN offers high-quality AlN on silicon and sapphire wafer, which is AlN epitaxial thin film grown on single crystal sapphire/Si substrate, that way can provide the most cost-effective solution to grow high quality III-V nitride thin film.
1. Wafer List:
Undoped AlN Template on Sapphire, [...]
2019-04-16meta-author
PAM XIAMEN offers LaAlO3 single crystal.
LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well [...]
2019-05-07meta-author
We have investigated the photoluminescence mapping characteristics of semi-insulating (SI) InP wafers obtained by annealing in iron phosphide ambience (FeP2-annealed). Compared with as-grown Fe-doped and undoped SI InP wafers prepared by annealing in pure phosphorus vapour (P-annealed), the FeP2-annealed SI InP wafer has been [...]
2019-11-11meta-author