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Towards the cost effective epitaxy of hillocks free CdZnTe film on (001)GaAs by close-spaced sublimation

Towards the cost effective epitaxy of hillocks free CdZnTe film on (001)GaAs by close-spaced sublimation   Cost-effective epitaxy of hillocks free CdZnTe films on (001)GaAs was explored with close-spaced sublimation (CSS) technique. The orientation and film quality were studied with scanning electron microscopy (SEM), X-ray diffraction θ–2θ and Φ scans and rocking, and cross-sectional transmission [...]

2013-11-20 , , , Read more...

GaAs mHEMT epi wafer

InGaAs/InAlAs heterostructure is realized on GaAs substrate. This GaAs-based metamorphic high electron mobility transistor (mHEMT) heterostructure can reduce the stress at the interface between heterostructure and GaAs through the gradual change of In composition. Such a mHEMT structure can provide device performance that is superior to GaAs-based pHEMT and [...]

2013-11-19 Read more...

GaAs/AlGaAs/GaAs epi wafer

GaAs / AlGaAs / GaAs epi wafer in the diameter of 2” or 4” is available. This GaAs epitaxial wafer is applicable for semiconductor microwave devices and microwave monolithic integrated circuits. Here comes the typical structure of gallium arsenide epi wafer, please see below: 1. GaAs Wafer Epitaxial Structures Structure 1: 2”GaAs/AlGaAs/GaAs epi wafer S.No Parameters Specifications 1 GaAs substrate layer thickness 500μm 2 layer thickness 2μm 3 GaAs top layer thickness 220 [...]

2013-11-19 Read more...

GaAs HEMT epi wafer

PAM-XIAMEN can offer 4” GaAs HEMT epi wafer with 2D electron gas (2DEG) and very high electron mobility of 5-7E5 cm2/V.s, please see below typical wafers of gallium arsenide with HEMT structure: 1. GaAs HEMT Epitaxial Wafer Structures Structure 1: 4″ AlGaAs / GaAs HEMT epi wafer (PAM200416-HEMT): HEMT structure Thickness GaAs cap layer 100A AlGaAs, x=0.28,barrier layer, [...]

2013-11-19 Read more...

Thermal Oxide on Silicon

We provide thermal oxide wafer with/without Ti layer/Pt layer in diameter from 2″ to 6″,now we give examples as follows: 1) 4 inch,silicon prime/test wafer,deposited with 5000 Angstroms of silicon oxide   2) Pt layer+Ti layer+thermal oxide layer deposit on silicon wafer: 4 inch Prime grade silicon,1-20 ohm cm,500 um thick ,Single side [...]

2013-11-15 Read more...

Investigation of Te inclusions in CdZnTe crystalline material using Raman spectroscopy and IR techniques

IR images reveal that Te inclusions exist in CdZnTe crystal in the form of square, hexagonal and triangular shapes. The density of Te inclusions for sizes above 5 μm sharply varied from 2.27 × 103 cm−2 to 4.52 × 105 cm−2 with a consequent reduction in IR transmittance from ∼60.5% to ∼55% when the Te-rich volume increased to 83 ppma. Raman spectra suggested [...]

2013-11-15 , , , Read more...

Effect of Al-induced crystallization on CdZnTe thin films deposited by radio frequency magnetron sputtering

High quality polycrystalline CdZnTe films were prepared by aluminum induced crystallization (AIC) and radio frequency (r.f.) magnetron sputtering. The crystallinity, morphology and optical property of both as-deposited and AIC samples were investigated by X-ray diffraction (XRD), and atomic force microscopy (AFM), as well as Raman and ultraviolet–visible spectrometry. The results of [...]

2013-11-13 , Read more...

InP/InGaAs/InP epi wafer

When the In composition in the InGaAs material reaches 0.53, and Ga reaches 0.47, InGaAs / InP lattice matched makes it can form a heterojunction. The InGaAs / InP heterojunction structure utilizes the steps of the conduction band and valence band formed by the difference in the band gap [...]

2013-11-13 Read more...