plaquette InP

PAM-XIAMEN offers VGF InP(Indium Phosphide) wafer with prime or test grade including undoped, N type or semi-insulating. The mobility of InP wafer is different in different type, undoped one>=3000cm2/V.s, N type>1000 or 2000cm2V.s(depends on different doping concentration), P type: 60+/-10 or 80+/-10cm2/V.s(depends on different Zn doping concentration), and semi-insulting one>2000cm2/V.s, the EPD of Indium Phosphide is below 500/cm2 normally.

  • La description

Description du produit

plaquette InP

PAM-XIAMEN, a leading InP wafer supplier, offers Compound Semiconductor InP wafer – Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating. The InP wafer orientation (111) or (100) is available. And the dopants can be Sulphur, Sn(Tin), Zinc or customs. The Laser Mark as specified on backside of InP wafer along with primary flat. The orientation with slight deflection angle is available, such as (100)0.075° towards [110]]±0.025°.

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic (“zinc blende”) crystal structure, identical to that of GaAs and most of the III-V semiconductors. Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide [clarification needed] at 400 °C., also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphide. Indium phosphide wafers are used in high-power and high-frequency electronics [citation needed] because of the superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. The InP wafer size we can offer is 2”, 3” and 4”, and the InP wafer thickness will be 350~625um.

Voici la spécification particulière: 

2 "InP Spécification Wafer
Article Caractéristiques
dopant De type N De type N De type P, SI type
Type de Conduction non dopé Soufre Zinc lron
Diamètre wafer 2 "
Orientation wafer (100) ± 0,5 °
Epaisseur wafer Min:325                        Max:375
Plat Longueur primaire 16 ± 2 mm
Plat Longueur secondaire 8 ± 1mm
Concentration porteuse 3×1016cm-3 (0.8-6)x1018cm-3 (0,6 à 6) x1018cm-3 N / A
Mobilité (3.5-4)x103cm2/V.s (1.5-3.5)x103cm2/V.s 50-70×103cm2/V.s >1000cm2/V.s
Résistivité N / A N / A N / A N / A
EPD <1000cm-2 <500cm-2 <1×103cm-2 <5×103cm-2
TTV <10um
ARC <10um
CHAÎNE <12um
marquage laser à la demande
finition Suface P / E, P / P
Epi prêt oui
Paquet récipient de plaquettes à l'unité ou de la cassette

 

2″ P Type InP Wafer Specification 

Article Parameter UOM
Material InP
Conduct Type/Dopant S-C-P/Zn
Grade Prime
Diameter: 50.5±0.4 mm
Orientation: (100) ± 0,5 °
Orientation Angle: /
Thickness: Min:325                        Max:375 um
Carrier Concentration: Min:0.6E18                   Max:3E18 cm-3
Resistivity: Min:/                              Max:/ ohm.cm
Mobility: Min:/                              Max:/ cm-2/V.sec
EPD: Ave<:1000                   Max<:/ cm-2
TTV: Max:10 um
TIR: Max:10 um
BOW: Max:10 um
Warp: Max:15 um
Flat Option: EJ
Primary Flat Orientation: (0-1-1)
Primary Flat Length: 16±1 mm
Secondary Flat Orientation: (0-11)
Secondary Flat Length: 7±1 mm
Suface: Side 1:Polished              Side 2:etched
Edge Rounding 0.25(Conform to SEMI Standards) mmR
Particle Count: /
Paquet individual container filled with  N2
Epi-ready Yes
Laser Marking Back side major flat
Remark: Special specifications will be discussed separately

 

3″ InP Wafer Specification 

Article Caractéristiques
dopant De type N De type N De type P, SI type
Type de Conduction non dopé Soufre Zinc lron
Diamètre wafer 3 "
Orientation wafer (100) ± 0,5 °
Epaisseur wafer 600 ± 25um
Plat Longueur primaire 16 ± 2 mm
Plat Longueur secondaire 8 ± 1mm
Concentration porteuse ≤3×1016cm-3 (0.8-6)x1018cm-3 (0,6 à 6) x1018cm-3 N / A
Mobilité (3.5-4)x103cm2/V.s (1.5-3.5)x103cm2/V.s 50-70×103cm2/V.s >1000cm2/V.s
Résistivité N / A N / A N / A N / A
EPD <1000cm-2 <500cm-2 <1×103cm-2 <5×103cm-2
TTV <12um
ARC <12um
CHAÎNE <15UM
marquage laser à la demande
finition Suface P / E, P / P
Epi prêt oui
Paquet récipient de plaquettes à l'unité ou de la cassette

 

 4″ InP Wafer Specification 

Article Caractéristiques
dopant De type N De type N De type P, SI type
Type de Conduction non dopé Soufre Zinc lron
Diamètre wafer 4 "
Orientation wafer (100) ± 0,5 °
Epaisseur wafer 600 ± 25um
Plat Longueur primaire 16 ± 2 mm
Plat Longueur secondaire 8 ± 1mm
Concentration porteuse ≤3×1016cm-3 (0.8-6)x1018cm-3 (0,6 à 6) x1018cm-3 N / A
Mobilité (3.5-4)x103cm2/V.s (1.5-3.5)x103cm2/V.s 50-70×103cm2/V.s >1000cm2/V.s
Résistivité N / A N / A N / A N / A
EPD <1000cm-2 <500cm-2 <1×103cm-2 <5×103cm-2
TTV <15UM
ARC <15UM
CHAÎNE <15UM
marquage laser à la demande
finition Suface P / E, P / P
Epi prêt oui
Paquet récipient de plaquettes à l'unité ou de la cassette

 

PL(Photoluminescence) Test of phosphure d'indium Wafer

We measure InP wafers by Peak Lambda, Peak int, and FWHM, the spectra mapping is as follows:

spectra mapping of InP wafer

 

About InP Wafer Application

As a new type of compound semiconductor material, InP wafer market share is increasing gradually. Due to the excellent indium phosphide properties, the performance of microwave power source devices, microwave amplifiers and gate FETs fabricated on InP material will be better than those fabricated on existing gallium arsenide materials. Indium phosphide heterojunction lasers are also extremely promising light sources in optical fiber communications.

InP wafer fabrication for devices, like growing millimeter wave microelectronic devices and optoelectronic device materials for optical fiber communications, is widely used. With the continuous improvement of device performance and the reduction of device size, the quality requirements for indium phosphide wafers are getting higher and higher. Therefore, the InP wafer process is optimizing gradually.

The the typical values is see below data:

Peak Lambda(nm) Peak Int FWHM(nm)
1279.4 7.799 48.5
1279.8 5.236 44.6

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