InSb wafer

PAM-XIAMEN propose une plaquette semi-conductrice InSb composée - une plaquette antimoniure d'indium qui est cultivée par LEC (Liquid Encapsulated Czochralski) en tant que qualité épi-prête ou mécanique avec type n, type p ou semi-isolant dans différentes orientations (111) ou (100). L'antimoniure d'indium dopé avec de l'isoélectronique (tel que le dopage N) peut réduire la densité de défauts pendant le processus de fabrication de films minces d'antimoniure d'indium.

  • La description

Description du produit

PAM-XIAMEN offers Compound Semiconductor InSb wafer – Indium antimonide wafer which is grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100). Indium antimonide doped with isoelectronic(such as N doping) can reduce the defect density during the indium antimonide thin films manufacturing process.

Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and in infrared astronomy. The indium antimonide detectors are sensitive between 1–5 µm wavelengths. Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as a terahertz radiation source as it is a strong photo-Dember emitter.

 
Spécification wafer
Article Caractéristiques
Diamètre wafer 2 "50,5 ± 0,5 mm
3″76.2±0.4mm
4″1000.0±0.5mm
cristal Orientation 2 "(111) AorB ± 0,1 °
3″(111)AorB±0.1°
4″(111)AorB±0.1°
Épaisseur 2 "625 ± 25um
3″ 800or900±25um
4″1000±25um
Longueur plat primaire 2 "16 ± 2 mm
3″22±2mm
4″32.5±2.5mm
longueur plat secondaire 2 "8 ± 1mm
3″11±1mm
4″18±1mm
Finition de surface P / E, P / P
Paquet Epi-Ready, récipient de plaquettes à l'unité ou de la cassette CF
Caractéristiques électriques et dopage
Type de Conduction de type n de type n de type n de type n de type p
dopant non dopé Tellure tellure faible tellure haute Genmanium
EPD cm-2 2″3″4″≤50 2″≤100
Mobility cm² V-1s-1 ≥4*105 ≥2.5*104 ≥2.5*105 Non précisé 8000-4000
Carrier Concentration cm-3 5*1013-3*1014 (1-7)*1017 4*1014-2*1015 ≥1*1018 5*1014-3*1015

 

 

1)2″(50.8mm)InSb Wafer
Orientation:(100)
Type/Dopant:N/undoped
Diameter:50.8mm
Thickness:300±25µm;500um
Nc:<2E14a/cm3
Polish:SSP

2)2″(50.8mm)InSb Wafer
Orientation:(100)
Type/Dopant:N/Te
Diameter:50.8mm
Carrier Concentration: 0.8 – 2.1 x 1015 cm-3
Thickness:450+/- 25 um;525±25µm
EPD < 200 cm-2
Polish:SSP

3)2″(50.8mm)InSb Substrate
Orientation:(111) + 0.5°
Thickness:450+/- 50 um
Type/Dopant:N/undoped
Carrier Concentration: < 5 x 10^14 cm-3
EPD < 5 x 103 cm-2
Surface roughness: < 15 A
Bow/Warp: < 30 um
Polish:SSP

4)2″(50.8mm)InSb Substrate
Orientation:(111) + 0.5°
Type/Dopant:P/Ge
Polish:SSP

5)2″(50.8mm)Indium Antimonide Wafer
Thickness:525±25µm,
Orientation:[111A]±0.5°
Type/Dopant:N/Te
Ro=(0.020-0.028)Ohmcm,
Nc=(4-8)E14cm-3/cc,
u=(4.05E5-4.33E5)cm²/Vs,
EPD<100/cm²,
Mobility:4E5cm2/Vs
One side edge;
In(A) Face: Chemically-mechanically final polished to 0.1µm (Final Polish),
Sb(B) Face: Chemically-mechanically final polished to <5µm (Lasermark),
NOTE: Nc and Mobility are at 77ºK.
Polish:SSP;DSP

6) 2 "(50,8 mm) GaSb
Thickness:525±25µm,
Orientation:[111B]±0.5°,
Type/Dopant:P/undoped;N/undoped
Polish:SSP;DSP

État de la surface et d'autres spécifications
Indium Antimonide wafer can be offered as wafers with as-cut, etched or polished finishes with wide range of doping concentration and thickness. The InSb wafer could be high quality epi-ready finishing.

Orientation Spécification

Indium antimonide surface orientations are supplied to an accuracy of +/- 0.5 degrees using a triple axis X-Ray diffractometer system. Indium antimonide substrates can also be supplied with very precise misorientations in any direction from the growth plane. The available InSb wafer orientation could be (100),(111), (110) or other orientation or mis degree.

Condition d'emballage

Polished wafer: individually sealed in two outer bags in inert atmosphere. Cassette shipments are available if required.
As-cut Wafer: Cassette shipment. (Glassine bag available on request).

Indium Antimonide Properties and Uses

The indium antimonide crystal structure is silver, brittle, and zinc blende structure. The indium antimonide lattice constant is 6.48 Å, and indium antimonide is a direct bandgap material with a narrow band gap of 0.18 eV. The indium antimonide conduction electron mobility is as high as 7800 cm2/V·s , which can be used to make infrared detectors, photomagnetic detectors and Hall devices.

Produits relatifs:
plaquette InAs
plaquette InSb
plaquette InP
tranche de GaAs
plaquette GaSb
plaquette GaP

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