Epi Wafer pour diode laser
GaAs based LD epitaxy wafer, which can generate stimulate emission, is widely used for fabricating laser diode since the superior GaAs epitaxial wafer properties make the device a low energy consumption, high efficiency, long lifetime and etc. In addition to gallium arsenide LD epi wafer, commonly used semiconductor materials are cadmium sulfide (CdS), indium phosphide (InP), and zinc sulfide (ZnS).
- La description
Description du produit
Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), a LD epitaxial wafer supplier, focuses on the GaAs and InP based laser diode epi wafers grown by MOCVD reactors for fiber-optic communication, industrial application, and special-purpose usage. PAM-XIAMEN can offer LD epitaxy wafer based on GaAs substrate for various fields, like VCSEL, infrared, photo-detector and etc. More details about the LD epitaxy wafer material, please refer to the table below:
| Matériau du substrat | capacité matériel | Longueur d'ondes | Application |
| GaAs | GaAs / GaInP / AlGaInP / GaInP | 635nm | |
| GaAs Based Epi-plaquette | 650nm | Laser à émission de surface à cavité verticale (VCSEL) RCLED |
|
| GaAs / GaInP / AlGaInP / GaInP | 660nm | ||
| GaAs / AlGaAs / GaInP / AlGaAs / GaAs | 703nm | ||
| GaAs / GaInP / AlGaInP / GaInP | 780nm | ||
| GaAs / GaInP / AlGaInP / GaInP | 785nm | ||
| GaAs Based Epi-plaquette | 800-1064nm | LD infrarouge | |
| GaAs / GaInP / AlGaInP / GaInP | 808nm | LD infrarouge | |
| GaAs Based Epi-plaquette | 850nm | Laser à émission de surface à cavité verticale (VCSEL) RCLED |
|
| GaAs Based Epi-plaquette | <870nm | Photo-détecteur | |
| GaAs Based Epi-plaquette | 850-1100nm | Laser à émission de surface à cavité verticale (VCSEL) RCLED |
|
| GaAs / AlGaAs / GaInAs / AlGaAs / GaAs | 905nm | ||
| GaAs / AlGaAs / InGaAs / AlGaAs / GaAs | 950nm | ||
| GaAs Based Epi-plaquette | 980nm | LD infrarouge | |
| InP à base Epi-plaquette | 1250-1600nm | Avalanche photo-détecteur | |
| GaAs Based Epi-plaquette | 1250-1600nm /> 2.0um (Couche absorbante InGaAs) |
Photo-détecteur | |
| GaAs Based Epi-plaquette | 1250 à 1600 nm / <1,4 μm (Couche absorbante InGaAsP) |
Photo-détecteur | |
| InP à base Epi-plaquette | 1270-1630nm | laser DFB | |
| substrat GaAsP / GaAs / GaAs | 1300nm | ||
| InP à base Epi-plaquette | 1310nm | laser FP | |
| substrat GaAsP / GaAs / GaAs | 1550nm | laser FP | |
| 1654nm | |||
| InP à base Epi-plaquette | 1900nm | laser FP | |
| 2004nm |
About LD Epitaxy Wafer Applications & Market
The applications of GaAs based LD epitaxy wafer in the laser field can be divided into VCSELs and non-VCSELs. The current GaAs based LD epitaxy applications mainly lies in VCSELs. VCSEL (Vertical Cavity Surface Emitting Laser), based on GaAs materials, is mainly used for face recognition. It is expected to have a high growth rate in the future. EEL (Edge Emitting Laser) is a non-VCSEL device, mainly used in the field of automotive lidar, and the demand is expected to increase with the expansion of the driverless car market.
The GaAs substrate used in the laser field requires high technical indicators, and the unit epitaxial wafer price is significantly higher than that of other fields. The future LD epitaxial market space can be expected. Laser applications are the most sensitive to dislocation density. There is a high requirement for the GaAs substrate materials in laser applications. Therefore, the higher requirement is put forward on LD epitaxial wafer manufacturers and LD epitaxial wafer process. At present, the near-infrared band (760~1060 nm) semiconductor laser based on GaAs substrate has the most mature development and the most widespread application, and it has already been commercialized.
Please see below detail specification of LD epitaxy wafer:
diode laser à 703nm plaquette epi
diode laser 808nm epi plaquette-1
diode laser à 780nm plaquette epi
diode laser à 650nm plaquette epi
diode laser à 785nm plaquette epi
Plaquettes épi à diode laser 808 nm-2
diode laser à 850nm plaquette epi
diode laser à 905nm plaquette epi
diode laser à 950nm plaquette epi
diode laser 1550nm plaquette epi
diode laser 1654nm plaquette epi
diode laser 2004nm plaquette epi
GaAs Epitaxy with Thick Growth
MOCVD Epi Structure basé sur GaAs développé pour un émetteur de lumière
Narrow InGaAsP Quantum Well Grown on InP Wafer
InAs Quantum Dot Layers on InP Substrate
Chips EMETTEUR simples
Puce LD à émetteur unique 755 nm à 8 W
Puce LD à émetteur unique 808 nm à 8 W
Puce LD à émetteur unique 808 nm à 10 W
Puce LD à émetteur unique 830 nm à 2 W
Puce LD à émetteur unique 880 nm à 8 W
Puce LD à émetteur unique 900 + nm @ 10W
Puce LD à émetteur unique 900 + nm @ 15W
Puce LD à émetteur unique 905 nm à 25 W
Puce LD à émetteur unique 1470 nm à 3 W
PAM XIAMEN propose une seule puce laser haute puissance 1470 / 1550nm comme suit:
LD Bare Bar
LD Bare Bar pour 780 nm à cavité 2,5 mm
Barre nue LD pour 808 nm @ cavité 2 mm
Barre nue LD pour 808 nm à cavité 1,5 mm
Barre nue LD pour 880 nm @ cavité 2 mm
LD Bare Bar pour 940 nm @ cavité 2 mm
LD Bare Bar pour 940 nm à cavité 3 mm
Barre nue LD pour 940 nm à cavité 4 mm
LD Bare Bar pour 940 nm @ cavité 2 mm
Barre nue LD pour 976 nm à cavité 4 mm