Epi Wafer pour diode laser

Epi Wafer pour diode laser

GaAs based LD epitaxy wafer, which can generate stimulate emission, is widely used for fabricating laser diode since the superior GaAs epitaxial wafer properties make the device a low energy consumption, high efficiency, long lifetime and etc. In addition to gallium arsenide LD epi wafer, commonly used semiconductor materials are cadmium sulfide (CdS), indium phosphide (InP), and zinc sulfide (ZnS).

  • La description

Description du produit

Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), a LD epitaxial wafer supplier, focuses on the GaAs and InP based laser diode epi wafers grown by MOCVD reactors for fiber-optic communication, industrial application, and special-purpose usage. PAM-XIAMEN can offer LD epitaxy wafer based on GaAs substrate for various fields, like VCSEL, infrared, photo-detector and etc. More details about the LD epitaxy wafer material, please refer to the table below:

Matériau du substrat capacité matériel Longueur d'ondes Application
GaAs GaAs / GaInP / AlGaInP / GaInP 635nm  
GaAs Based Epi-plaquette 650nm Vertical Cavity Surface Emitting Laser (VCSEL)
RCLED
GaAs / GaInP / AlGaInP / GaInP 660nm  
GaAs / AlGaAs / GaInP / AlGaAs / GaAs 703nm  
GaAs / GaInP / AlGaInP / GaInP 780nm  
GaAs / GaInP / AlGaInP / GaInP 785nm  
GaAs Based Epi-plaquette 800-1064nm LD infrarouge
GaAs / GaInP / AlGaInP / GaInP 808nm LD infrarouge
GaAs Based Epi-plaquette 850nm Vertical Cavity Surface Emitting Laser (VCSEL)
RCLED
GaAs Based Epi-plaquette <870nm Photo-détecteur
GaAs Based Epi-plaquette 850-1100nm Vertical Cavity Surface Emitting Laser (VCSEL)
RCLED
GaAs / AlGaAs / GaInAs / AlGaAs / GaAs 905nm  
GaAs / AlGaAs / InGaAs / AlGaAs / GaAs 950nm  
GaAs Based Epi-plaquette 980nm LD infrarouge
InP à base Epi-plaquette 1250-1600nm Avalanche photo-détecteur
GaAs Based Epi-plaquette 1250-1600nm/>2.0um
(InGaAs absorptive layer)
Photo-détecteur
GaAs Based Epi-plaquette 1250-1600nm/<1.4μm
(InGaAsP absorptive layer)
Photo-détecteur
InP à base Epi-plaquette 1270-1630nm laser DFB
substrat GaAsP / GaAs / GaAs 1300nm  
InP à base Epi-plaquette 1310nm laser FP
substrat GaAsP / GaAs / GaAs 1550nm laser FP
  1654nm  
InP à base Epi-plaquette 1900nm laser FP
  2004nm  

 

About LD Epitaxy Wafer Applications & Market

The applications of GaAs based LD epitaxy wafer in the laser field can be divided into VCSELs and non-VCSELs. The current GaAs based LD epitaxy applications mainly lies in VCSELs. VCSEL (Vertical Cavity Surface Emitting Laser), based on GaAs materials, is mainly used for face recognition. It is expected to have a high growth rate in the future. EEL (Edge Emitting Laser) is a non-VCSEL device, mainly used in the field of automotive lidar, and the demand is expected to increase with the expansion of the driverless car market.

The GaAs substrate used in the laser field requires high technical indicators, and the unit epitaxial wafer price is significantly higher than that of other fields. The future LD epitaxial market space can be expected. Laser applications are the most sensitive to dislocation density. There is a high requirement for the GaAs substrate materials in laser applications. Therefore, the higher requirement is put forward on LD epitaxial wafer manufacturers and LD epitaxial wafer process. At present, the near-infrared band (760~1060 nm) semiconductor laser based on GaAs substrate has the most mature development and the most widespread application, and it has already been commercialized.

Please see below detail specification of LD epitaxy wafer:

VCSEL Laser Wafer Chip

VCSEL Laser Epi Wafer

diode laser à 703nm plaquette epi

diode laser 808nm epi plaquette-1

diode laser à 780nm plaquette epi

diode laser à 650nm plaquette epi

diode laser à 785nm plaquette epi

808nm laser diode epi wafers-2

diode laser à 850nm plaquette epi

diode laser à 905nm plaquette epi

940nm laser diode epi wafer

diode laser à 950nm plaquette epi

diode laser 1550nm plaquette epi

diode laser 1654nm plaquette epi

diode laser 2004nm plaquette epi

GaAs Epitaxy with Thick Growth

GaAs based Epi Structure MOCVD Grown for Light Emitter

Narrow InGaAsP Quantum Well Grown on InP Wafer

InAs Quantum Dot Layers on InP Substrate

 

Chips EMETTEUR simples

Un seul émetteur LD Chip 755nm @ 8W

Un seul émetteur LD Chip 808nm @ 8W

Un seul émetteur LD Chip 808nm @ 10W

Un seul émetteur LD Chip 830nm @ 2W

Un seul émetteur LD Chip 880nm @ 8W

Un seul émetteur LD Chip 900 nm + @ 10W

Un seul émetteur LD Chip 900 nm + @ 15W

Un seul émetteur LD Chip 905nm @ 25W

Un seul émetteur LD Chip 1470nm @ 3W

PAM XIAMEN offers 1470 / 1550nm high power laser single chip as follows:

LD Bare Bar

LD Bar nu pour 780nm @ cavité 2.5mm

LD Bar nu pour cavité 808nm @ 2 mm

LD Bar nu pour 808nm @ cavité 1,5mm

LD Bar nu pour la cavité 880nm de 2 mm @

LD Bar nu pour cavité 940nm @ 2 mm

LD Bar nu pour cavité 940nm @ 3 mm

LD Bare Bar pour 940nm @ cavité 4 mm

LD Bar nu pour cavité 940nm @ 2 mm

LD Bare Bar pour 976nm @ cavité 4 mm

LD Bar nu pour la cavité 1470nm de 2 mm @

LD Bar nu pour cavité 1550nm @ 2 mm