PAM XIAMEN offers Thermal Oxide. If you don’t see what you need then Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Physical Constants
Constant Name
Value
Density (g/cm3)
2.27
Dielectric Constant
3.9
DC Resistivity @25°C (Ω-cm)
1016
Energy gap (eV)
~9
Thermal conductivity (W/cm2°C)
0.014
Linear expansion coefficient (ppm/°C)
0.05
Refractive index
1.46
Melting Point (°C)
~1700
Molecular weight
60.08
Molecules/cm3
2.3*1022
Specific [...]
2019-02-26meta-author
PAM XIAMEN offers BGO, Bismuth germanate, Bi4Ge3O12 Scintillation Crystals.
SPECIFICATIONS:
Crystal structure: Cubic
Lattice Parameter: a=10.518 Å
Density: 7.13(g/cm3)
Hardness: 5(mohs)
Melt point: 1050℃
Index of refraction: 2.15
Radiation length: 1.1cm
Peak of fluorescence spectra : 480nm
Decay time: 300ns
Relative light output(%): 10-14 Nal(Tl)
Energy resolution: 20% @511KV
Crystal orientation: <001>、<110>
Size(mm):Special size and orientation are available upon request
Polishing: Single or double
Packaging: Clean room
MAIN APPLICATIONS
Positron emission tomography (PET)
High-energy physics
Nuclear medicine
Geological prospecting
Gamma pulse spectroscopy
BGO [...]
2019-03-11meta-author
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade.
Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
2019-05-20meta-author
GaAs (gallim arsenide) epitaxial wafer with specific growth for high voltage (HV) diode stacks can be provided by PAM-XIAMEN. Gallium arsenide structure provides required power density, efficiency and reliability for extremely compact systems. GaAs diode wafers meet the requirements for power electronics in modern [...]
2022-01-28meta-author
PAM XIAMEN offers Ti – Titanium Substrate ( Polycrystalline).
General Properties for Titanium
Symbol Ti
Atomic Number 22
Atomic Weight: 47.867
Crystal structure: HCP
Lattice constant at room temperature a: 0.295 nm
Lattice constant at room temperature b: 0.468 nm
Density: 4.506 g/cm3
Melting Point: 1668°C [...]
2019-05-10meta-author
PAM-XIAMEN offers (10-11) Plane Si-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(10-11)-SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(10-11) plane off angle toward A-axis 0 ±0.5°
(10-11) plane off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
>106 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author