PAM XIAMEN offre une haute qualité GaSb plaquettes monocristallines.
1. Specifications of GaSb Single Crystal Wafers
GaSb non dopé
GaSb plaquette (100), non dopée, 10x10x0.5 mm, 1sp
GaSb Wafer (100), undoped, 2″x0.45 mm ,1sp
GaSb Wafer (100), undoped, 2″x0.5 mm two sides polished
GaSb Wafer (111)-A, undoped,P-type 2″x0.4 mm ,2sp
GaSb Wafer (111)-B, undoped,P-type 2″x0.4 mm ,2sp
GaSb Si dopées
GaSb (100) de type P, Si dopé, 2 "x plaquette 0,450 mm, 1sp
GaSb Te-dopés
GaSb (100), type N, Te dopé, 2 "D plaquette x0.45mm 1sp concentration de porteurs: 3,5 x 10 ^ 17 ^ cm -3
GaSb (100), N Type, Te doped, 2″D x0.45mm wafer 1sp,Carrier Concentration: (1-7)x10^17 cm^-3
GaSb (100), N Type, Te doped, 2″D x0.5mm wafer 1sp
GaSb dopé de Zn
GaSb, (100), Zn- dopée, de type P, 2 "de diamètre x 0,45 mm, 1sp
GaSb, (100), Zn- doped,, P-type, 2″ dia x 0.45mm, 1sp
2. FAQ of GaSb Wafer
Q1: Can we have a better Bow and Warp of GaSb wafer, <5um?
A: BOW and WARP of GaSb substrate should be <8um, 5um is too difficult.
Q2: what is the dislocation density in a regular manner and can we have EPD mapping of GaSb wafer ?
A: EPD of GaSb material is <1000, see below mapping:
Q3:Could you please offer us the following characterization data of GaSb substrate?
(TTV, Bow and Warp, Surface Oxide Thickness, FTIR Transmission, Mobility / Carrier Concentration / Resistivity mapping, EPD cartography, …)
A:Usually, all the data of GaSb should be tested after polished and before shipment, but we can show you some example data, like EPD, oxidized-warp-bow, oxidized-TTV-TIR, oxide layer thickness and so on. To obtain detailed information please contact victorchan@powerwaywafer.com.
Pour plus d'informations, veuillez nous contacter par email àvictorchan@powerwaywafer.com et powerwaymaterial@gmail.com.