Antireflection-Coated Blue GaN Laser Diodes in an External Cavity and Doppler-Free Indium Absorption Spectroscopy Commercially available GaN-based laser diodes were antireflection coated in our laboratory and operated in an external cavity in a Littrow configuration. A total tuning range of typically 4 nm and an [...]
2013-04-01meta-author
PAM XIAMEN offers PbTe Single Crystal, Lead Telluride Crystal.(Not sell it temporarily) Technical specifications: Melting point: 924°C (1,695 °F; 1,197 K) Lattice constant: a = 6.46 Angstroms Solubility in water: insoluble Band gap: 0.25 eV (0 K) 0.32 eV (300 K) Electron Mobility: 1600 cm2 V−1 s−1 (0 K) 6000 cm2 V−1 s−1 (300 K) Crystal structure: Halite (cubic) Available sizes: 10 x 10 x1 mm, 5x5x1 mm, 20 x 10x 1mm. Customization [...]
2019-03-14meta-author
Thermal-mechanical characteristics and outgassing efficiency of integrated in-plane outgassing channels (IPOCs) at Al2O3-intermediated InP (die)-to-Si (wafer) bonding interface is investigated. The IPOCs are introduced and investigated via both multi-physics simulation and experimental demonstration. Thermal stress simulation indicates that Al2O3 bonding layer efficiently mitigates the [...]
2020-03-09meta-author
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [110] ±0.5° 2″ 279 P/E FZ >1,000 p-type Si:B [100] 2″ 300 P/E FZ 2,800-3,300 SEMI Prime, TTV<7μm p-type Si:B [100] 2″ 300 P/E FZ 2,800-3,300 SEMI Prime, TTV<7μm p-type Si:B [100] 2″ 300 P/E FZ 2,800-3,300 SEMI Prime, TTV<7μm p-type Si:B [111] ±0.5° 2″ 500 P/P FZ 5,000-6,500 SEMI Test (in unsealed cassette) p-type Si:B [111] ±0.5° 2″ 275 P/E FZ 3,000-5,000 SEMI Prime, Lifetime>2,000μs, in hard cassettes of 5 wafers p-type Si:B [111-7° towards[110]] ±0.5° 2″ 279 P/P FZ >2,000 SEMI Prime p-type Si:B [111] ±0.5° 2″ 331 P/E FZ 2,000-5,000 SEMI, Soft cst p-type Si:B [111] ±0.5° 2″ 331 P/E FZ 2,000-5,000 SEMI TEST (Scratched), Soft cst p-type Si:B [111] ±0.5° 2″ 331 P/E FZ 2,000-5,000 SEMI [...]
2019-03-07meta-author
PAM XIAMEN offers Bi12GeO20 (BGO20). Bi12GeO20 – BGO20 (001) 10x5x1.0 mm 1 side polished Features: Crystal Bi12GeO20 ( BGO20) — New generation acousto-optic crystal Wafer size: 10 x 5 x1.0 mm thick Orientation: (001) +/-0.5o Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A 1 sides polished Package: Each wafer is packed in [...]
2019-04-17meta-author
IR images reveal that Te inclusions exist in CdZnTe crystal in the form of square, hexagonal and triangular shapes. The density of Te inclusions for sizes above 5 μm sharply varied from 2.27 × 103 cm−2 to 4.52 × 105 cm−2 with a consequent reduction in IR transmittance from ∼60.5% to ∼55% when the Te-rich volume increased [...]