PAM-XIAMEN has silicon boule for sale, which is a raw material for semiconductor silicon device manufacturing, making high-power rectifiers, high-power transistors, diodes, switching devices, and etc. The monocrystalline silicon crystal with a basically complete lattice structure has a band gap of 1.11eV. Single crystalline silicon with different [...]
2021-07-05meta-author
PAM XIAMEN offers GaN on Sapphire for Power.
1.1 GaN HEMT Structure on Sapphire for Power Application
Wafer size
2”, 3”, 4”, 6”
AlGaN/GaN HEMT structure
Refer 1.2
Carrier density
6E12~2E13 cm2
Hall mobility
/
XRD(102)FWHM
~arc.sec
XRD(002)FWHM
~arc.sec
Sheet Resistivity
/
AFM RMS (nm)of 5x5um2
<0.25nm
Bow(um)
<=35um
Edge exclusion
<2mm
SiN passivation layer
0~30nm
Al composition
20-30%
In composition
17% for InAlN
GaN cap
/
AlGaN/(In)AlN barrier
/
AlN interlayer
/
GaN channel
/
C [...]
2019-05-17meta-author
Thermodynamics and kinetic theory of nucleation and the evolution of liquid precipitates in gallium arsenide wafer
We study nucleation and evolution of liquid droplets in semi-insulating solid gallium arsenide (GaAs). For a realistic modelling, the crucial issue of a combined thermodynamic and kinetic treatment is [...]
PAM XIAMEN offers Magnesium ( Mg ) Single Crystal Substrate.
Magnesium ( Mg ) Single Crystal Substrate , <0001> orn. 5x5x0.9-1.0mm, 1SP
Magnesium ( Mg) Polycrystaline Substrate , 10x10x2.0mm, as Cut
Magnesium ( Mg) Single Crystal Substrate , <0001> orn. 10x10x0.85-1.0mm, 1SP
Magnesium ( [...]
2019-05-10meta-author
PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2595
n–type Si:Sb
[111–4°] ±0.5°
4″
420
P/EOx
0.008–0.018 {0.0138–0.0151}
SEMI Prime, 2Flats, Empak cst, Epi edges, TTV<2μm, HBSD+LTO seal
PAM2596
n–type Si:Sb
[111–4.0°] ±0.5°
4″
475 ±15
P/E
0.005–0.020 {0.0113–0.0156}
SEMI Prime, 2Flats, Empak cst
PAM2597
n–type Si:As
[111]
4″
450
P/E
0.004–0.005
SEMI Prime, 1Flat, Empak cst
PAM2598
n–type Si:As
[111] [...]
2019-02-19meta-author
Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs
We have investigated the effects of nonradiative recombination centers (NRCs) on the device performance of InGaN/GaN multi-quantum-well (MQW) light-emitting diodes (LEDs) inserting low-temperature n-GaN (LT-GaN) underlying [...]