Taille de bloc de silicium 5x20mm

Taille de bloc de silicium 5x20mm

Connexe Messages

What Are HEMT and pHEMT Technologies?

HEMTs evolved from Field Effect Transistors (FETs) are suitable for manufacturing monolithic microwave integrated circuits (MMICs). HEMTs were initially generated to obtain high electron mobility in semiconductor devices at room temperature. The electron mobility of FETs is limited even with high doping levels, so high [...]

2022-07-25méta-auteur
Plaquette épi GaAs HEMT

PAM-XIAMEN can offer 4” GaAs HEMT epi wafer with 2D electron gas (2DEG) and very high electron mobility of 5-7E5 cm2/V.s, please see below typical wafers of gallium arsenide with HEMT structure: 1. GaAs HEMT Epitaxial Wafer Structures Structure 1: 4″ AlGaAs / GaAs HEMT epi wafer (PAM200416-HEMT): HEMT [...]

2013-11-19méta-auteur
Origin, modeling and suppression of grinding marks in ultra precision grinding of silicon wafers

A phenomenon commonly encountered in grinding of silicon wafers is the grinding marks, which are difficult to remove by subsequent polishing process, and have been a great obstacle to the manufacture of silicon wafers with higher flatness. In this paper, the grinding marks formation [...]

2013-09-13méta-auteur
Test grade silicon wafers-4

PAM XIAMEN offers test grade silicon wafers Below is just a short list of the test grade silicon substrates! Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp 6 DSP Boron P 100 0,0 ± 0,0 110 ± 0,20 0.0 ± 0.1 ° 1 – 20 Ohmcm 150.0 ± 0.2 mm 675 ± 5 µm 60 3 6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 30 – [...]

2019-02-25méta-auteur
200mm SiC Wafers

Silicon carbide (SiC) single crystals are at the forefront of the silicon carbide industry chain, and are the foundation and key to the development of the high-end chip industry. The larger the SiC substrate size, the more chips can be manufactured on per unit substrate, and [...]

2023-03-31méta-auteur
Metal Impurity Content Identified in Mono and Polycrystalline Silicon Crystals

The impurity elements in crystalline silicon materials mainly include non-metallic impurities such as carbon, oxygen, boron, and phosphorus, and metal impurity such as iron, aluminum, copper, nickel, and titanium. Metal impurities generally exist in interstitial states, substitution states, complexes or precipitations in crystalline silicon, [...]

2022-09-27méta-auteur