Silicon Epi Wafers Sale

Silicon Epi Wafers Sale

Silicon Epi Wafers Sale

PAM XIAMEN offers Silicon Epi Wafers.

 

 

 

6″ Epitaxial Silicon Wafers

Item Substrate EPI Comment
Size Type Res Ωcm Surf. Thick μm Type Res Ωcm
PAM3053 6″Øx675μm n- Si:P[100] 0.001-0.002 P/EOx 0.016 n- Si:P 0.32-0.46 n/n+

4″ Epitaxial Silicon Wafers

Item Substrate EPI Comment
Size Type Res Ωcm Surf. Thick μm Type Res Ωcm
PAM3053 4″Øx360μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 360 – 440 n/n+
PAM3054 4″Øx400μm p- Si:B[111] 0.01-0.10 P/E 6.5 p- Si:B 3.6±10% P/P/P+
22±1.5 p- Si:B 300±50
PAM3055 4″Øx525μm p- Si:B[111] 0.01-0.02 P/E 8.1±1 p- Si:B 4.5±10% P/P/P+
6.85±0.75 p- Si:B 0.75±0.15
PAM3056 4″Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 10.5 p- Si:B 570±10% p/p+
PAM3057 4″Øx440μm p- Si:B[111] 0.008-0.020 P/E 20 p- Si:B 0.15 ±10% P/P+
PAM3058 4″Øx440μm p- Si:B[111] 0.008-0.020 P/E 20 p- Si:B 0.25±10% P/P+
PAM3059 4″Øx525μm p- Si:B[111] 0.001-0.005 P/E 20 p- Si:B 175±10% P/P+
PAM3060 4″Øx440μm p- Si:B[111] 0.008-0.020 P/E 21 p- Si:B 150 ±10% P/P+
PAM3061 4″Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 23 p- Si:B 200±10% P/P+
PAM3062 4″Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 23 p- Si:B 80±10% P/P+
PAM3063 4″Øx440μm p- Si:B[111] 0.008-0.020 P/E 32 p- Si:B 600 ±10% P/P+
PAM3064 4″Øx440μm p- Si:B[111] 0.01-0.02 P/E 32.5 p- Si:B 100±10% P/P+
PAM3065 4″Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 40 p- Si:B 550 ±10% P/P+
PAM3066 4″Øx525μm p- Si:B[111] 0.01-0.02 P/E 14 n- Si:P 2.5±0.3 N/P/P+
10 p- Si:B 15
PAM3067 4″Øx525μm p- Si:B[111] 0.01-0.02 P/E 14 n- Si:P 2.5±10% n/p/p+
10 p- Si:B 9±10%
PAM3068 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 20 p- Si:B 10±1.5 P/N/N+
10 n- Si:P 5.5±0.7
PAM3069 4″Øx381μm n- Si:As[111] 0.0010-0.0035 P/E 33 p- Si:B 12±10% P/N/N+
10 n- Si:P 4±10%
PAM3070 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 33±5 p- Si:B 12±2 P/N/N+
9 n- Si:P 4
PAM3071 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 37 p- Si:B 35±10% P/N/N+
16.5 n- Si:P 12.5±10%
PAM3072 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 45 p- Si:B 13±10% P/N/N+
7±1 n- Si:P 12±10%
PAM3073 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 45 p- Si:B 14.5±10% P/N/N+
7 n- Si:P 12±10%
PAM3074 4″Øx525μm n- Si:As[111] 0.002-0.005 P/E 88 p- Si:B 80.5±10% P/N/N+
88 n- Si:P 27±10%
PAM3075 4″Øx380μm n- Si:As[111] 0.002-0.005 P/E 105 p- Si:B 0.0035±10% P/N/N+
26 n- Si:P 5±10%
PAM3076 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 10.15 n- Si:P 3.8±0.5 N/N/N+
6.8±0.8 n- Si:P 0.55±0.15
PAM3077 4″Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 16.5 n- Si:P 35 ±10% N/N+
PAM3078 4″Øx508μm n- Si:As[111] 0.002-0.005 P/E 19±1.3 n- Si:P 25±5 N/N/N+
54.5±3.6 n- Si:P 4.4
PAM3079 4″Øx380μm n- Si:As[111] 0.001-0.005 P/EOx 20 n- Si:P 270 ±10% N/N+
PAM3080 4″Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 0.09 ±10% N/N+
PAM3081 4″Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 90±10% N/N+
PAM3082 4″Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 0.07 ±10% N/N+
PAM3083 4″Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 0.13 ±10% N/N+
PAM3084 4″Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 0.15 ±10% N/N+
PAM3085 4″Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 0.19 ±10% N/N+
PAM3086 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 65 ±10% N/N+
PAM3087 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 20 n- Si:P 7±10% N/N/N+
10 n- Si:P 2±0.4
PAM3088 4″Øx380μm n- Si:As[111] 0.001-0.005 P/EOx 21 n- Si:P 150 ±10% N/N+
PAM3089 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 22.5 n- Si:P 12±10% N/N/N+
28.5 n- Si:P 2±10%
PAM3090 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 26 n- Si:P 18±10% N/N/N+
11 n- Si:P 2±10%
PAM3091 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 27 n- Si:P 220 ±10% N/N+
PAM3092 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 27.5 n- Si:P >250 N/N+
PAM3093 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 28 n- Si:P 165 ±10% N/N+
PAM3094 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 28 n- Si:P 11±10% N/N/N+
43689 n- Si:P 43468
PAM3095 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 28 n- Si:P 43688 N/N/N+
43719 n- Si:P 43468
PAM3096 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 30 n- Si:P 11±10% N/N/N/N+
15 n- Si:P 4±10%
5 n- Si:P 1.5±10%
PAM3097 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 39.5 n- Si:P 29±10% N/N/N+
12 n- Si:P 4±10%
PAM3098 4″Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 41.5 n- Si:P >300 ±10% N/N+
PAM3099 4″Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 41.5 n- Si:P >200 N/N+
PAM3100 4″Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P 600 ±10% N/N+
PAM3101 4″Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P >200 N/N+
PAM3102 4″Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P 340 ±10% N/N+
PAM3103 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 50 n- Si:P 36±4 N/N/N+
15 n- Si:P 5.4±0.7
PAM3104 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 75 n- Si:P 66 ±10% N/N+
PAM3105 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 78 n- Si:P 25 ±10% N/N+
PAM3106 4″Øx525μm n- Si:As[111] 0.001-0.005 P/EOx 78 n- Si:P 20 ±10% N/N+
PAM3107 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 80 n- Si:P 17.5 ±10% N/N+
PAM3108 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 80 n- Si:P 60±10% N/N/N+
10 n- Si:P 2±1
PAM3109 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 80 n- Si:P 70±10% N/N/N+
10 n- Si:P 2±1
PAM3110 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 22.5 p- Si:B 15±10% P/N/N+
15 n- Si:P 6±0.9
PAM3111 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 38 p- Si:B 55±10% P/N/N+
18 n- Si:P 10±10%
PAM3112 4″Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 14 n- Si:P 4.25 ±10% N/N+
PAM3113 4″Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 15 n- Si:P 90 ±10% N/N+
PAM3114 4″Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 18 n- Si:P 0.25 ±10% N/N+
PAM3115 4″Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 75 ±10% N/N+
PAM3116 4″Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 136 ±10% N/N+
PAM3117 4″Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 101 ±10% N/N+
PAM3118 4″Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 20 n- Si:P 300±10% N/N+
PAM3119 4″Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 21 n- Si:P 400±10% N/N+
PAM3120 4″Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 22.5 n- Si:P 12.5±10% N/N+
PAM3121 4″Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 25 n- Si:P 0.08 ±10% N/N+
PAM3122 4″Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 25 n- Si:P 0.04 ±10% N/N+
PAM3123 4″Øx360μm n- Si:Sb[111] 0.005-0.020 P/E 37.5 n- Si:P 270 ±10% N/N+
PAM3124 4″Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 37.5 n- Si:P 85±10% N/N+
PAM3125 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 58 n- Si:P 60±10% N/N/N/N+
15 n- Si:P 8±10%
5 n- Si:P 3±10%
PAM3126 4″Øx460μm n- Si:Sb[111] 0.007-0.020 P/E 60 n- Si:P 40.5±4.5 N/N/N+
20 n- Si:P 10±2
PAM3127 4″Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 60 n- Si:P 60 ±10% N/N+
PAM3128 4″Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 60 n- Si:P 58.75 ±10% N/N+
PAM3129 4″Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 70 n- Si:P 60 ±10% N/N+
PAM3130 4″Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 75 n- Si:P 125 ±10% N/N+
PAM3131 4″Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 100 n- Si:P 420±10% N/N+

3″ Epitaxial Silicon Wafers

Item Substrate EPI Comment
Size Type Res Ωcm Surf. Thick μm Type Res Ωcm
PAM3132 3″Øx508μm p- Si:B[111] 0.008-0.020 P/E 12.5 p- Si:B 2.35 p+
140±10 n- Si:P 33.6
PAM3133 3″Øx381μm n- Si:As[111-4°] 0.001-0.005 P/E 5.5 n- Si:P 0.31 – 0.33 n/n+
PAM3134 3″Øx525μm n- Si:P[111] 0.001-0.005 P/E 4.5 n- Si:P 1.1 – 1.4 n/n+, Sealed in cassettes of 24 wafers
PAM3135 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 5.5 n- Si:P 1.06±10% N/N+
PAM3136 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 11 n- Si:P 17.5±10% N/N+
PAM3137 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 16±10% N/N+
PAM3138 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 2.1±10% N/N+
PAM3139 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.7±10% N/N+
PAM3140 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.3±10% N/N+
PAM3141 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.3±10% N/N+
PAM3142 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.8±10% N/N+
PAM3143 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 13 n- Si:P 1.35±10% N/N+
PAM3144 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 15.5 n- Si:P 9.5±10% N/N+
PAM3145 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 15.5 n- Si:P 9.5±10% N/N+
PAM3146 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 18 n- Si:P 0.05±10% N/N+
PAM3147 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 22 n- Si:P 4.8±10% N/N+
PAM3148 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 22 n- Si:P 4±10% N/N+
PAM3149 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 22 n- Si:P 4±10% N/N+
PAM3150 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 28 n- Si:P 16.5±10% N/N+
PAM3151 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 28.5 n- Si:P 4±10% N/N+
PAM3152 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 28.5 n- Si:P 20±10% N/N+
PAM3153 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 30 n- Si:P 4.5±10% N/N+
PAM3154 3″Øx355μm n- Si:As[111] 0.001-0.005 P/E 34 n- Si:P 9.5±10% N/N+
PAM3155 3″Øx355μm n- Si:As[111] 0.001-0.005 P/E 34 n- Si:P 12±10% N/N+
PAM3156 3″Øx355μm n- Si:As[111] 0.001-0.005 P/E 34 n- Si:P 11±10% N/N+
PAM3157 3″Øx355μm n- Si:As[111] 0.001-0.005 P/E 36 n- Si:P 4±10% N/N+
PAM3158 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 37.5 n- Si:P 0.6±10% N/N+
PAM3159 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 41 n- Si:P 25±10% N/N+
PAM3160 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 42 n- Si:P 20.5±10% N/N+
PAM3161 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 42.5 n- Si:P 17±10% N/N+
PAM3162 3″Øx355μm n- Si:As[111] 0.001-0.005 P/E 52.5 n- Si:P 12.5±10% N/N+
PAM3163 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 56 n- Si:P 12±10% N/N+
PAM3164 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 70 n- Si:P 73±10% N/N+
PAM3165 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 72 n- Si:P 12.5±10% N/N+
PAM3166 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 73 n- Si:P 84±10% N/N+
PAM3167 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 75 n- Si:P 13±10% N/N+
PAM3168 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 75 n- Si:P 11±10% N/N+
PAM3169 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 80 n- Si:P 12±10% N/N+
PAM3170 3″Øx375μm n- Si:As[111] 0.001-0.005 P/E 85 n- Si:P 22.5 ±10% N/N+
PAM3171 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 85 n- Si:P 19.5±10% N/N+
PAM3172 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 85 n- Si:P 66±10% N/N+
PAM3173 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 90 n- Si:P 41±10% N/N/N+
18 n- Si:P 5±10%
PAM3174 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 96 n- Si:P 30±10% N/N+
PAM3175 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 16 ±10% N/N+
PAM3176 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 12±10% N/N+
PAM3177 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 20±10% N/N+
PAM3178 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 21±10% N/N+
PAM3179 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 135 n- Si:P 35±10% N/N+
PAM3180 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 140 n- Si:P 31±10% N/N+
PAM3181 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 145 n- Si:P 38±10% N/N+
PAM3182 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 145 n- Si:P 25±10% N/N+
PAM3183 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 150 n- Si:P 44±10% N/N+
PAM3184 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 158 n- Si:P 67±10% N/N+
PAM3185 3″Øx381μm n- Si:Sb[111] 0.005-0.020 P/E 8 n- Si:P 0.63±10% N/N+
PAM3186 3″Øx381μm n- Si:Sb[111] 0.005-0.020 P/E 22.5 n- Si:P 0.07±10% N/N+
PAM3187 3″Øx381μm n- Si:Sb[111] 0.005-0.020 P/E 30 n- Si:P 6.75±10% N/N+
PAM3188 3″Øx330μm n- Si:Sb[111] 0.005-0.018 P/E 75 n- Si:P 40±10% N/N/N+
25 n- Si:P 2.5±10%

100mm P/B (111) 400μm .01-0.10 ohm-cm SSP100mm P/B (100) 525μm 0.008-0.020 ohm-cm DSP
100±10 N/PHn 40 – 60 ohm-cm n/p+, Back-side polished after Epi deposition
certificate available

6.522±1.5 p- Si:B p- Si:B .6±10% 300±50 P/P/P+

76.2mm N/As (111) 0.001-0.005 ohm-cm SSP
75 n- Si:P 11±10% N/N+

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

2019-02-13

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Light–Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching In this paper, we report the fabrication and characteristics of nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface roughness. The surface roughness of devices was controlled by [...]

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GaInP/InP epi wafer

III-V group compound GaInP is an efficient luminescent ternary mixed crystal material, which can be grown on InP substrate. PAM-XIAMEN can offer GaInP thin film growth on InP substrate for various applications, like photoluminescent testing. More about the GaInP / InP epi wafer please see [...]

2014-11-11meta-author , , ,