Silicon Wafer

PAM-XIAMEN, a silicon wafer manufacturing company, offers silicon wafer: FZ Silicon wafer, Test Wafer Monitor Wafer Dummy Wafer, Test Wafer, CZ wafer, epitaxial wafer, polished wafer, etching wafer.

The silicon wafer manufacturing process is crystal pulling, dicing, grinding, chamfering, etching, polishing, cleaning and inspection, among which crystal pulling, wafer polishing and inspection are the core links of Si wafer manufacturing. As the basic semiconductor substrate, silicon wafers must have high standards of purity, surface flatness, cleanliness, and impurity contamination to maintain the original designed functions of the chip. The high-specification requirements of semiconductor silicon wafers make its manufacturing process complicated. The four core steps include polysilicon purification and polysilicon ingot casting, single crystal Si wafer growth, and Si wafer cutting and shaping. As a raw material for wafer fab, the quality of silicon wafers directly determines the stability of the wafer application process. Large-size silicon wafers have become the future development trend of silicon wafers. In order to improve production efficiency and reduce costs, more and more large-size silicon wafers are used.

  • 12 "Premier grade Silicon Wafer

    PAM-XIAMEN offer 300mm bare silicon wafers (12 inch) in prime grade, n type or p type, and the 300mm silicon wafer thickness is 775±15. Compared to other silicon wafer suppliers, Powerway Wafer’s silicon wafer price is more competitive with higher quality. 300mm silicon wafers have a higher yield per wafer than pervious large diameter silicon wafers.

  • 12″ Silicon Wafers 300mm TOX ( Si Thermal Oxidation Wafer )

    PAM-XIAMEN offers 300mm silicon oxide wafer and dioxide wafer. Thermal oxide silicon wafer or silicon dioxide wafer is a bare silicon wafer with oxide layer grown by dry or wet oxidation process. The thermal oxide layer of the silicon wafer is usually grown in a horizontal tube furnace, and the silicon wafer oxide temperature range is generally 900 ℃ ~ 1200 ℃. Compared with CVD oxide layer, silicon wafer oxide layer has higher uniformity, better compactness, higher dielectric strength and better quality.

  • 12 "Test de qualité Silicon Wafer

    PAM-XIAMEN offers 300mm bare silicon wafers (12 inch) dummy, test grade, n type or p type. Compared to other silicon wafer suppliers, Powerway Wafer offers professional service with competitive prices.

  • Float-Zone monocristallins Silicon

    PAM-XIAMEN peut proposer une plaquette de silicium à zone flottante, obtenue par la méthode de zone flottante. Les tiges de silicium monocristallin sont obtenues par croissance de zone flottante, puis les tiges de silicium monocristallin sont transformées en plaquettes de silicium, appelées plaquettes de silicium à zone flottante. Etant donné que la plaquette de silicium fondue par zone n'est pas en contact avec le creuset en quartz pendant le processus de silicium à zone flottante, le matériau de silicium est dans un état suspendu. De ce fait, il est moins pollué lors du processus de fusion en zone flottante du silicium. La teneur en carbone et la teneur en oxygène sont plus faibles, les impuretés sont moindres et la résistivité est plus élevée. Il convient à la fabrication d'appareils de puissance et de certains appareils électroniques à haute tension.

  • Test Wafer Moniteur Wafer Dummy Wafer

    En tant que fabricant de plaquettes factices, PAM-XIAMEN propose des plaquettes factices en silicone / plaquettes de test / plaquettes de contrôle, qui sont utilisées dans un dispositif de production pour améliorer la sécurité au début du processus de production et sont utilisées pour le contrôle de livraison et l'évaluation de la forme du processus. Comme les plaquettes de silicium factices sont souvent utilisées à des fins d'expérimentation et de test, leur taille et leur épaisseur sont des facteurs importants dans la plupart des cas. Une plaquette factice de 100 mm, 150 mm, 200 mm ou 300 mm est disponible.

  • Cz monocristallins Silicon

    PAM-XIAMEN, a monocrystalline bulk silicon producer, can offer <100>, <110> and <111> monocrystalline silicon wafers with N&P dopant in 76.2~200 mm, which are grown by CZ method. The Czochralski method is a crystal growth method, referred to as the CZ method. It is integrated in a straight-tube heat system, heated by graphite resistance, melts the polysilicon contained in a high-purity quartz crucible, and then inserts the seed crystal into the surface of the melt for welding. After that, the rotating seed crystal is lowered and melted. The body is infiltrated and touched, gradually raised, and finished or pulled through the steps of necking, necking, shouldering, equal diameter control, and finishing.

  • Silicon Wafer épitaxial

    Silicon Epitaxial Wafer(Epi Wafer) is a layer of epitaxial silicon single crystal deposited onto a single crystal silicon wafer(note: it is available to grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline silicon wafer, but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epitaxial silicon layer. It also can be used for thin film transistor.

  • Wafer poli

    PAM-XIAMEN can offer polished wafer, n type or p type with orientation at <100>, <110> or <111>. FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)

  • Eau-forte Wafer

    The etching silicon wafers offered by PAM-XIAMEN are N type or P type etching wafers, which have low roughness, low reflectivity and high reflectivity. The etching wafer has the characteristics of low roughness, good glossiness and relatively low cost, and directly substitutes the polished wafer or epitaxial wafer which has relatively high cost to produce the electronic elements in some fields, reducing the costs.