PAM XIAMEN offers 4″CZ Epitaxial Prime Silicon Wafer.
4″ Si epi wafer
Growth Method: CZ
100 +/- 0.5 mm diameter silicon
Orientation <111> 4deg off
P Type Boron doped 0.002 – 0.003 ohm cm
Front side polished – Epi ready
thickness 525 +/-25 um [...]
2019-07-05meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111] ±0.5°
4″
630
P/G
FZ >7,000
SEMI Prime, Lifetime>1,000μs, Back-side Fine Ground
n-type Si:P
[111] ±0.5°
4″
675
P/E
FZ >7,000
SEMI, Lifetime>1,600μs,settes of 6 and 8 wafers
n-type Si:P
[111] ±0.5°
4″
675
P/E
FZ >7,000
SEMI, Lifetime>1,600μs
n-type Si:P
[111] ±0.5°
4″
675
P/E
FZ >7,000
SEMI TEST (Scratches, Lifetime>1,600μs
n-type Si:P
[111] ±0.25°
4″
675
P/E
FZ 7,000-10,000
SEMI Prime, Lifetime>1,000μs, Light scratches
n-type Si:P
[111] ±0.5°
4″
525
P/E
FZ >5,000
SEMI Prime, Lifetime>1,000μs
n-type Si:P
[111-1° towards[110]] ±0.5°
4″
525
P/E
FZ >5,000
SEMI TEST (scratches on back-side)
n-type Si:P
[111] ±0.25°
4″
675
P/E
FZ 5,000-7,000
SEMI Prime, [...]
2019-03-05meta-author
PAM-XIAMEN offers SiC-on-SiC epi wafer for pin-diodes (p-n junction SiC epi wafer) as follows:
SiC-On-SiC Epi Wafer For Pin-Diodes
1. Specifications of SiC Epitaxy on Silicon Carbide Substrate
pin-diodes structure 1: SiC-on-SiC epi-wafer PAM060320-SIC
p+[Al]: 5 µm, gradient doping, Na-Nd = 5*10^18 – 1*10^20 ± 50% cm-3
p[Al]: [...]
2020-08-04meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
3″
5000
P/E
1-30
Prime, NO Flats, Individual cst
p-type Si:B
[100]
3″
300
P/P
0.5-10.0
SEMI Prime, TTV<2μm, Empak cst
p-type Si:B
[100]
3″
315
P/P
0.5-10.0
SEMI Prime, TTV<3μm
p-type Si:B
[100]
3″
3,050 ±50
C/C
>0.5
1Flat, Individual cst (can be ordered singly)
p-type Si:B
[100]
3″
250
P/E
0.15-0.20
SEMI TEST (Scratches), in sealed Empak cassettes of 3 wafers
p-type Si:B
[100]
3″
250
BROKEN
0.15-0.20
Broken wafers, in Epak cst
p-type Si:B
[100]
3″
356
P/P
0.015-0.020
SEMI
p-type Si:B
[100-4° towards[110]] ±0.5°
3″
230
P/E
0.01-0.02
SEMI Prime, TTV<5μm
p-type Si:B
[100]
3″
300
P/E
0.01-0.02
SEMI Prime
p-type [...]
2019-03-06meta-author
PAM XIAMEN offers TiO2(Anatase) substrate.
TiO2 Anatase (001) 5x5x0.5mm, 1 SP”
TiO2 Anatase (100) 5x5x0.5mm, 1 SP
TiO2 Anatase (101) 5x5x0.5mm, 1 SP
TiO2 Anatase (103) 5x5x0.5mm, 1 SP
TiO2 Anatase (110) 5x5x0.5mm, 1 SP
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-05-20meta-author
PAM-01A is a single channel preamplifier. It can be used as a key part for semiconductor detector, including CZT and Si, or others, including scintillator and gas.
1. Charge Sensitive Pre-amplifier Specification
Power Consumption
<0.43W
Power
±12V
Output Resistance
50 Ω
Equivalent Noise
ENC: 130e–
Working temperature
-20℃-+40℃
Falling edge time
250 ~ 400us
Input charge range
<1000fc
Gain
G=10mv/fc
Dimension
100×76×44mm3
Weight
265g
2. Charge [...]
2019-04-25meta-author