PAM XIAMEN offers SiO2 (single crystal quartz).
Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries.
Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is accomplished by the following formulas:
X-cut (110), (-1-10) = (11-20) or (22-40), XRD 2theta is 36.56 or 77.73 degrees
Y-cut (100), (010) (0-10) = (10-10),(20-20) or (30-30), XRD 2theta is 20.86,42.46,65.83 degrees
Z-cut (001) = (0001), XRD 2theta is 50.66 degree or 117.7 degrees
ST-Cut, a rotated Y-cut with rotation 42.5°
AT-Cut, a rotated Y-cut with rotation 35°15′
Z Cut single crystal quartz
Quartz Saw grade, Z-cut, 5x5x1.0mm, 1sp
Quartz single crystal, optical grade Z-cut, 10x10x1.0mm, 1 sp
Quartz single crystal, saw grade Z-cut, 10x10x1.0mm, 1 sp
Quartz single crystal, Z-cut, 10x10x0.1mm, 2 sp
Quartz single crystal, Z-cut, 10x10x0.5mm, 1 sp
Quartz single crystal, Z-cut, 10x10x0.5mm, 2sp
Quartz single crystal, Z-cut, 10x10x1.0mm, 2 sp
Quartz single crystal, Z-cut, 15x15x1.0mm, 2 sp
Quartz single crystal, Z-cut, 2″x2″x1.0 mm, 2 sp
Quartz single crystal, Z-cut, 2″x2″x2.0 mm, 2 sp
Quartz single crystal, Z-cut, 20x20x0.5 mm, 2 sp
Quartz single crystal, Z-cut, 25x25x0.5 mm, 2 sp
Quartz single crystal, Z-cut, 25x25x1.0 mm, 2 sp
Quartz, optical grade Z-cut, 5x5x0.5mm 2sp
Quartz Z-cut, 2″ dia x 0.5mm, 1 sp
Quartz Z-cut, 2″ dia x 0.5mm, 2 sp
Quartz Z-cut, 3″ dia x 0.5mm, 1 sp
Quartz Z-cut, 3″ dia x 0.5mm, 2 sp
Quartz Single Crystal Wafer, Z-cut, 4″ dia x 0.5mm, 1 sp
Quartz single crystal, Z-cut, 100mm dia x0.5mm, 2 sp
Quartz single crystal, Z-cut, 4″ dia x0.5mm, 2 sp
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.