Tag - freestanding GaN layers

Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy

Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy   GaN freestanding substrate was obtained by hydride vapor phase epitaxy directly on sapphire with porous network interlayer. The morphologies of Ga-face and N-face of freestanding GaN substrate were analyzed by a variety of characterization [...]