InP-DHBT tridimensionnel sur intégration SiGe-BiCMOS au moyen d'une liaison de plaquettes à base de benzocyclobutène pour circuits à ondes MM
Highlights •Fabrication scheme for heterogenous Si-to-InP circuits on wafer level is described. •Wafer-to-wafer alignment accuracy better than 4–8 μm after bonding obtained. •Interconnects with excellent performance up to 220 GHz demonstrated. •Palladium barrier necessary when combining Al-based technology with gold based one. Abstract In order to benefit from the material properties of both InP-HBT and SiGe-BiCMOS technologies [...]