Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocation
Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocation Highlights •High-quality InSb was grown on GaAs by MBE using a “buffer-free” method. •The strain energy is relieved by interfacial misfit dislocations observed by TEM. •The type and separation of dislocations are consistent with theoretical prediction. •InSb film [...]