Test grade silicon wafers-1

Test grade silicon wafers-1

PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!

 

Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp
4 DSP Antimony N+ 100 32,5 ± 2,5 110 ± 1  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 1.0 ° 0.010 – 0.020 Ohmcm 100.0 ± 0.5 mm 340 ± 10 µm 2
4 DSP Antimony N+ 100 32,5 ± 2,5 110 ± 0,20  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.2° 0.010 – 0.025 Ohmcm 100 ± 0.5 mm 300 ± 5 µm
4 DSP Antimony N+ 100 32,5 ± 2,5 110 ± 0,50  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.2 ° 0.010 – 0.022 Ohmcm 100.0 ± 0.5 mm 310 ± 5 µm 20 1 20
4 DSP Antimony N+ 100 32,5 ± 2,5 110 ± 1 0.0 ± 0.5° 0.005 – 0.020 Ohmcm 100 ± 0.2 mm 300 ± 2.5 µm 60 3 60
4 DSP Antimony N+ 100 32,5 ± 2,5 110 ± 0,50 0.0 ± 1 ° 0.008 – 0.022 Ohmcm 100.0 ± 0.5 mm 400 ± 10 µm
4 DSP Antimony N+ 100 32,5 ± 2,5 110 ± 0,50 0.0 ± 0.2° 0.01 – 0.03 Ohmcm 100.0 ± 0.5 mm 600 ± 15 µm 40 5 40
4 DSP Antimony N+ 100 32,5 ± 2,5 110 ± 0,50  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5° 0.01 – 0.02 Ohmcm 100.0 ± 0.5 mm 420 ± 5 µm 40 2 40
4 DSP Antimony N+ 100 32,5 ± 2,5 110 ± 0,50  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5° 0.01 – 0.02 Ohmcm 100.0 ± 0.5 mm 520 ± 5 µm 40 2 40
4 DSP Antimony N+ 100 32,5 ± 2,5 110 ± 0,20  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.2° 0.010 – 0.025 Ohmcm 100 ± 0.5 mm 315 ± 5 µm 1
4 DSP Antimony N+ 100 32,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 0.01 – 0.02 Ohmcm 100.0 ± 0.5 mm 420 ± 5 µm 40 2 40
4 DSP Antimony N+ 100 32,5 ± 2,5 110 ± 1  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 1.0 ° 0.010 – 0.020 Ohmcm 100.0 ± 0.5 mm 380 ± 10 µm 2
4 DSP Antimony N+ 100 32,5 ± 2,5 110 ± 1  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 1.0 ° 0.010 – 0.020 Ohmcm 100.0 ± 0.5 mm 355 ± 10 µm 2
4 DSP Antimony N+ 100 32,5 ± 2,5 110 ± 1  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 1.0 ° 0.010 – 0.020 Ohmcm 100.0 ± 0.5 mm 500 ± 10 µm 2
4 DSP Antimony N+ 100 32,5 ± 2,5 110 ± 0,20  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.2° 0.010 – 0.025 Ohmcm 100 ± 0.5 mm 300 ± 5 µm 1
4 DSP Antimony N+ 100 32,5 ± 2,5 110 ± 1  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5 ° 0.005 – 0.020 Ohmcm 100 ± 0.5 mm 525 ± 25 µm 33 11
4 DSP Antimony N+ 100 32,5 ± 2,5 110 ± 1  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5 ° 0.005 – 0.020 Ohmcm 100 ± 0.5 mm 525 ± 25 µm 33 11
4 DSP Antimony N+ 100 32,5 ± 2,5 110 ± 0,50  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5° 0.010 – 0.025 Ohmcm 100 ± 0.5 mm 315 ± 3 µm
4 DSP Antimony N+ 100 32,5 ± 2,5 110 ± 1  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 1.0 ° 0.010 – 0.020 Ohmcm 100.0 ± 0.5 mm 380 ± 10 µm 2
4 DSP Antimony N+ 100 32,5 ± 2,5 110 ± 1 0.0 ± 0.5° 0.005 – 0.020 Ohmcm 100 ± 0.2 mm 300 ± 2.5 µm 60 3 60
4 DSP Antimony N+ 100 32,5 ± 2,5 110 ± 1  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 1.0 ° 0.010 – 0.020 Ohmcm 100.0 ± 0.5 mm 380 ± 10 µm
4 DSP Arsenic N+ 100 32,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 0.001 – 0.005 Ohmcm 100 ± 0.5 mm 380 ± 10 µm 1
4 DSP Boron P+ 100 32,5 ± 2,5 110 ± 0,50 0.0 ± 0.5 ° 0.01 – 0.020 Ohmcm 100.0 ± 0.3 mm 327 ± 5 µm 3
4 DSP Boron P+ 100 32,5 ± 2,5 110 ± 1   90 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5 ° 0.015 – 0.020 Ohmcm 100.0 ± 0.3 mm 381 ± 7 µm 1
4 DSP Boron P+ 100 32,5 ± 2,5 110 ± 0,50   90 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 1.0 ° 0.01 – 0.02 Ohmcm 100 ± 0.5 mm 525 ± 25 µm
4 DSP Boron P 100 32,5 ± 2,5 110 ± 1   90 ±   1.0 °,  18.00 ±  2.00 mm 0.0 ± 1.0 ° 0.5 – 10 Ohmcm 100 ± 0.5 mm 318 ± 12.7 µm 40 1 40
4 DSP Boron P 110 32,5 ± 2,5 111 ± 0,10   70 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.1° 5 – 10 Ohmcm 100 ± 0.15 mm 200 ± 15 µm 30 10 30
4 DSP Boron P+ 100 32,5 ± 2,5 110 ± 1 0.0 ± 1.0° 0.010 – 0.020 Ohmcm 100 ± 0.5 mm 200 ± 10 µm 40 3 40
4 DSP Boron P 100 32,5 ± 2,5 110 ± 0,50   90 ±   1.0 °,  18.00 ±  2.00 mm 0.0 ± 1.0 ° 0.5 – 10 Ohmcm 100 ± 0.38 mm 889 ± 12.7 µm 40 8 40
4 DSP Boron P 100 32,5 ± 2,5 110 ± 1   90 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5 ° 0.1 – 0.5 Ohmcm 100.0 ± 0.2 mm 380 ± 5 µm 20 2 20
4 DSP Boron P 100 32,5 ± 2,5 110 ± 1   90 ±   1.0 °,  18.00 ±  2.00 mm 0.0 ± 1.0 ° 0.5 – 10 Ohmcm 100 ± 0.38 mm 508 ± 12.7 µm 40 8 40
4 DSP Boron P 111 32,5 ± 2,5 110 ± 1 4.0 ± 1.0 ° 10 – 20 Ohmcm 100 ± 0.5 mm 525 ± 25 µm 33 3
4 DSP Boron P 100 32,5 ± 2,5 110 ± 0,50   90 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 1.0 ° 8 – 22 Ohmcm 100.0 ± 0.2 mm 225 ± 10 µm
4 DSP Boron P 100 32,5 ± 2,5 110 ± 1 0.0 ± 0.5 ° 3 – 5 Ohmcm 100 ± 0.5 mm 350 ± 10 µm
4 DSP Boron P 100 32,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 1 – 5 Ohmcm 100 ± 0.3 mm 225 ± 5 µm
4 DSP Boron P 100 32,5 ± 2,5 110 ± 1   90 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 1.0 ° 1 – 20 Ohmcm 100 ± 0.5 mm 350 ± 15 µm
4 DSP Boron P+ 100 32,5 ± 2,5 110 ± 0,30   90 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.2 ° < 0.020 Ohmcm 100 ± 0.2 mm 300 ± 15 µm 25 3 25
4 DSP Boron P 100 32,5 ± 2,5 110 ± 1   90 ±   1.0 °,  18.00 ±  2.00 mm 0.0 ± 1.0 ° 0.5 – 10 Ohmcm 100 ± 0.38 mm 318 ± 12.7 µm 40 1 40
4 DSP Boron P+ 111 32,5 ± 2,5 110 ± 1 0.0 ± 0.1 ° 0.0034 – 0.004 Ohmcm 100 ± 0.5 mm 450 ± 5 µm
4 DSP Boron P 110 32,5 ± 2,5 111 ± 0,10   70 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.1° > 1 Ohmcm 100 ± 0.15 mm 381 ± 15 µm 30 10 30
4 DSP Boron P 100 32,5 ± 2,5 110 ± 0,50   90 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5° 1 – 20 Ohmcm 100 ± 0.5 mm 280 ± 10 µm 2
4 DSP Boron P 100 32,5 ± 2,5 110 ± 0,20 90 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.2° 1 – 20 Ohmcm 100 ± 0.2 mm 490 ± 5 µm 1 40
4 DSP Boron P 100 32,5 ± 2,5 110 ± 0,50   90 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5 ° 5 – 10 Ohmcm 100 ± 0.5 mm 525 ± 5 µm
4 DSP Boron P 110 32,5 ± 2,5 111 ± 0,20   70 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.2° 5 – 10 Ohmcm 100 ± 0.5 mm 380 ± 5 µm
4 DSP Boron P 100 32,5 ± 2,5 110 ± 1   90 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5 ° 5 – 7 Ohmcm 100.0 ± 0.5 mm 483 ± 25 µm 33 3
4 DSP Boron P 100 32,5 ± 2,5 110 ± 0,20 0.0 ± 0.5° 2 – 4 Ohmcm 100 ± 0.2 mm 280 ± 5 µm
4 DSP Boron P 100 32,5 ± 2,5 110 ± 0,50   90 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5° 3 – 7 Ohmcm 100 ± 0.5 mm 300 ± 5 µm
4 DSP Boron P 100 32,5 ± 2,5 110 ± 0,50   90 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5 ° 1 – 5 Ohmcm 100 ± 0.3 mm 390 ± 10 µm 1
4 DSP Boron P 100 32,5 ± 2,5 110 ± 0,50   90 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5° 3 – 7 Ohmcm 100 ± 0.5 mm 385 ± 5 µm 40 3 40
4 DSP Boron P 100 32,5 ± 2,5 110 ± 0,20 0.0 ± 0.2 ° 1 – 20 Ohmcm 100 ± 0.2 mm 490 ± 20 µm 1
4 DSP Boron P+ 100 32,5 ± 2,5 110 ± 1   90 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5 ° 0.015 – 0.020 Ohmcm 100.0 ± 0.3 mm 381 ± 7 µm 1
4 DSP Boron P 100 32,5 ± 2,5 110 ± 1 0.0 ± 1.0° 1 – 100 Ohmcm 100 ± 0.3 mm 202 ± 4 µm 35 4 35

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

 

Share this post