Freestanding GaN Substrate

Freestanding GaN Substrate

Product Specifications

PAM XIAMEN offers Freestanding GaN Substrate

2″GaN Free-standing Substrate

Item PAM-FS-GaN50-N PAM-FS-GaN50-SI
Conduction Type N-type Semi-insulating
Size 2″(50.8)+/-1mm
Thickness 260+/-20um
Orientation C-axis(0001)+/-0.5°
Primary Flat Location (1-100)+/-0.5°
Primary Flat Length 16+/-1mm
Secondary Flat Location (11-20)+/-3°
Secondary Flat Length 8+/-1mm
Resistivity(300K) <0.5Ω·cm >10^6Ω·cm
Dislocation Density <5×10^6cm-2
Marco Defect Density A grade<=2cm-2 B grade>2cm-2
TTV <=15um
BOW <=20um
Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished
Back Surface:1.Fine ground
2.Rough grinded
≥ 90 %

Usable Area

 

 

 

 

 

1.5″GaN Free-standing Substrate

Item PAM-FS-GaN50-N PAM-FS-GaN50-SI
Conduction Type N-type Semi-insulating
Size 1.5″(38.1)+/-0.5mm
Thickness 260+/-20um
Orientation C-axis(0001)+/-0.5°
Primary Flat Location (1-100)+/-0.5°
Primary Flat Length 12+/-1mm
Secondary Flat Location (11-20)+/-3°
Secondary Flat Length 6+/-1mm
Resistivity(300K) <0.5Ω·cm >10^6Ω·cm
Dislocation Density <5×10^6cm-2
Marco Defect Density A grade<=2cm-2 B grade>2cm-2
TTV <=15um
BOW <=20um
Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished
Back Surface:1.Fine ground
2.Rough grinded
≥ 90 %

Usable Area

 

 

 

 

 

15mm,10mm,5mm GaN Free-standing Substrate

Item PAM-FS-GaN50-N PAM-FS-GaN50-SI
Conduction Type N-type Semi-insulating
Size 14.0mm*15mm 10.0mm*10.5mm 5.0*5.5mm
Thickness 230+/-20um, 280+/-20um
Orientation C-axis(0001)+/-0.5°
Primary Flat Location
Primary Flat Length
Secondary Flat Location
Secondary Flat Length
Resistivity(300K) <0.5Ω·cm >10^6Ω·cm
Dislocation Density <5×10^6cm-2
Marco Defect Density 0cm-2
TTV <=15um
BOW <=20um
Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished
Back Surface:1.Fine ground
2.Rough grinded
≥ 90 %

Usable Area

 

 

 

 

 

Note:
Validation Wafer:Considering convenience of usage, PAM-XIAMEN offer 2″ Sapphire Validation wafer for below 2″ size Freestanding GaN

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

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