Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InP substrate and other related products and services, can offer InP substrate for Fiber optics network components. Our monocrystalline InP crystal substrate has excellent properties, a series of doping experiments have determined the effective segregation coefficient [...]
2017-08-18meta-author
PAM XIAMEN offers Single Crystals, Wafers and Crystal Substrates.
PAM XIAMEN provides both standard and customized high quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high frequency power devices, just to name [...]
2019-03-12meta-author
Three decorative LED luminaires from Acuity Brands were selected to receive a 2016 Lighting for Tomorrow (LFT) award. The annual competition was created in 2002 to recognize the best decorative, energy-efficient luminaires in the market, and is organized by the American Lighting Association, the Consortium for Energy Efficiency [...]
2016-09-14meta-author
PAM-XIAMEN offers 950nm InGaAs quantum well laser diode wafers. In the application of optoelectronic devices, the InGaAs / GaAs strained quantum well (QW) structure is one of the research hotspots, and the emission band of the InGaAs / GaAs strained quantum well covers the [...]
2019-03-13meta-author
PAM XIAMEN offers LaAlO3 Single Crystal Substrat
Lanthanum aluminate (LaAlO3) single crystal substrate is the large-scale high-temperature superconducting film,which has good match with YBaCuO and other high temperature superconductor materials and lattice, low dielectric constant and small microwave loss, so LaAlO3 substrate is suitable for [...]
2019-05-07meta-author
PAM-XIAMEN offers GaN on GaN wafer, which uses the homogeneous substrate. The main application market of GaN-on-GaN epi wafer is blue/green lasers, which are used in laser display, laser storage, laser lighting and other fields.
1. GaN on GaN Epitaxy Structure
Item 1:
Epitaxial Layer
Thickness
GaN Cap
3nm
AlxGaN
20nm
AIN
1nm
GaN
0.5um
Buffer layer
3um
GaN substrate
Item 2: 2” and 4” GaN Sub [...]
2019-05-17meta-author