PAM XIAMEN offers Ga2O3 Beta Gallium Oxide Wafer and crystal Substrates SEMI-insulating type.
Crystal structure: Monoclinic
a = 12.225 A
b = 3.040 A
c = 5.809 A
β = 103.7 degree
Melt point (℃): 1725
Dielectric constants: 10
Band Gap: 4.8 – 4.9 eV
Breakdown Voltage (V/cm): 8 MV/cm
Available Size: 5 x 5 mm, 10 x 10 mm，Ф1″ (1 inch diameter). Special sizes (smaller than 1 inch diameter) are available upon request.
Thickness: 350um +/- 50um, other thickness is available upon request
Polishing: Epi-ready, RMS < 0.5 nm on Ga face, optical polish on N face
Crystal Orientation: (010)
Ga Face Ra: ≤ 5Å (5µm × 5µm area), epi-ready
Beta gallium oxide (ß-Ga2O3) is a wide bandgap semiconductor material. Its wide bandgap of 4.8 – 4.9 eV, high breakdown field of 8 MV/cm, high dielectric constant and good electron mobilities can be translated into a high voltage Baliga figure of merit (HV-BFOM) that is > 3000 times greater than that of Si, > 8 times greater than that of 4H-SiC, and > 4 times that of GaN. In addition, its high frequency Baliga figure of merit is ~150 times that of Si, ~3 times that of 4H-SiC, and 50% greater than that of GaN.
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
Gallium oxide as host material for multicolor emitting phosphors
Development of gallium oxide power devices
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.