Ga2O3 on Sapphire Heteroepitaxy
Sapphire based gallium oxide(Ga2O3) epitaxial technology is currently one of the hotspots in semiconductor material research. β- Ga2O3 has the characteristics of ultra-high bandgap, high breakdown voltage, and strong radiation resistance, and has shown broad application prospects in the fields of high-voltage, high-power, and high-efficiency electronic devices. Sapphire, as an insulating substrate, can provide a favorable crystal growth environment for gallium oxide epitaxy, thereby improving the quality of epitaxial films and device performance. PAM-XIAMEN can prepare high-quality Ga2O3 on sapphire heteroepitaxial thin film with the following parameters:
1. Epitaxial Parameters of β Ga2O3 on Sapphire Substrate
| Item | Ga2O3 Heteroepitaxy | |
| Grade | Industrial Grade | Research Grade |
| Substrate | ||
| Material | Sapphire（Al2O3） | |
| Size | 10*10mm, 10*15mm, 2inch, Customized | |
| Thickness | 430um | |
| Orientation | （0001） | |
| Epilayer | ||
| Polytype | β-Ga2O3 | |
| Thickness | 0.01~0.2um | |
| Tolerance | ±5% | ±10% |
| Uniformity | ≤5% | ≤10% |
| Orientation | （-201）、（002） | |
| Conduction | UID | |
| Surface Roughness | ≤5nm（10*10um） | |
| Defect Density | <1cm-2 | <2cm-2 |
| Useable Area | ≥95% | ≥90% |
2. Influence of Off-Axis Sapphire Substrate on Morphology
Substrate orientation is a key factor affecting the quality of epitaxial films. Recently, a research team used MOCVD method to study the growth technology of gallium oxide on sapphire substrates with different mis-cut angles. The results indicate that a mis-cut sapphire substrate can significantly improve the epitaxial crystal quality of gallium oxide materials. For example, when the substrate cutting angle is 6 °, the X-ray rocking curve of the epitaxial film has the smallest full width at half maximum (FWHM) and higher crystal quality. This has a positive effect on studying the heteroepitaxial growth of gallium oxide thin films and promoting their applications.
3. Application Prospects of Sapphire Based Gallium Oxide
Ga2O3 on sapphire technology has potential applications in the following fields:
Solar blind ultraviolet photodetector: Ga2O3 thin film is suitable for solar blind ultraviolet detection due to its high bandgap characteristics, with high sensitivity and anti-interference ability;
Power devices, such as Schottky diodes (SBDs) and metal oxide semiconductor field-effect transistors (MOSFETs), can be applied to high-voltage, high-power electronic devices;
Other fields: such as RF devices, gas sensing, photocatalysis, and information storage.
At present, Ga2O3 on sapphire epitaxial wafers have become an ideal material for high-power devices, supporting customized sizes to meet different application requirements. The global gallium oxide industry has entered the early stage of commercialization, with power devices and solar blind ultraviolet photodetectors being clear directions for commercialization.
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