Ga2O3l-ß Crystal Substrate
PAM XIAMEN offers Ga2O3l-ß Crystal Substrate.
Ga2O3-ß Single Crystal Substrate, <010>+/-1° ori, 1″x0.35mm, 2SP, Research grade with “Twin”
Substrate Specifications:
Chmistry: ß-Ga2O3
Structure: Monoclinic
Lattice Constant: a=12.23A, b=3.04A, c=5.80A, ß=103.7°
Orientation: <010> +/-1°
Size: 1″ dia. x 0.35 mm
Conduction Type: Semi-insulating, Fe-doped
Doping density (Fe) : ~5E17 by SIMS.
Front surface finish: Epi-ready, RMS <0.5nm
Back surface finish: Optical polished
Ga2O3-ß Single Crystal Substrate, <010>+/-1° ori, 10x10x0.35mm, 2SP, Research grade with “Twin”
Substrate Specifications:
Chmistry: ß-Ga2O3
Structure: Monoclinic
Lattice Constant: a=12.23A, b=3.04A, c=5.80A, ß=103.7°
Orientation: <010> +/-1°
Size: 10×10 x 0.35 mm
Conduction Type: Semi-insulating, Fe-doped
Doping density (Fe) : ~5E17 by SIMS.
Front surface finish: Epi-ready, RMS <0.5nm
Back surface finish: Optical polished
Ga2O3-ß Single Crystal Substrate, <010>+/-1° ori, 5 x 5 x 0.35mm, 2SP, Research grade with “Twin”
Substrate Specifications:
Chmistry: ß-Ga2O3
Structure: Monoclinic
Lattice Constant: a=12.23A, b=3.04A, c=5.80A, ß=103.7°
Orientation: <010> +/-1°
Size: 5 x 5 x 0.35 mm
Conduction Type: Semi-insulating, Fe-doped
Doping density (Fe) : ~5E17 by SIMS.
Front surface finish: Epi-ready, RMS <0.5nm
Back surface finish: Optical polished
Ga2O3-ß Single Crystal Substrate, <100>+/-1° 10x10x0.75mm, 1SP
Substrate Specifications:
Chmistry: ß-Ga2O3 ( Made in China)
Structure: Monoclinic
Lattice Constant: a=12.23A, b=3.04A, c=5.80A, ß=103.7°
Orientation: <100> +/-1° ( Please pay attention a, b, c axis defination above )
Type/Dopant: N type
Size: 10×10 x 0.7-0.8 mm
Polish: one side polished
Resistivity: <=0.2 ohm.cm
Surface roughness: < 5A
Ga2O3-ß Single Crystal Substrate, <-201> ori, 10x10x0.6mm, 1SP
Substrate Specifications:
Chmistry: ß-Ga2O3 ( Made in China)
Structure: Monoclinic
Lattice Constant: a=12.23A, b=3.04A, c=5.80A, ß=103.7°
Orientation: <-201> +/-0.7° ( Please pay attention a, b, c axis defination above )
Type/Dopant: N type/Sn-doped
Size: 10×10 x 0.6 mm
Polish: one side polished
Surface roughness: < 5A
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.