Ga2O3l-ß Crystal Substrate

Ga2O3l-ß Crystal Substrate

PAM XIAMEN offers Ga2O3l-ß Crystal Substrate.

Ga2O3-ß Single Crystal Substrate, <010>+/-1° ori, 1″x0.35mm, 2SP, Research grade with “Twin”

Substrate Specifications:
Chmistry:                    ß-Ga2O3 
Structure:                    Monoclinic
Lattice Constant:         a=12.23A, b=3.04A, c=5.80A, ß=103.7°
Orientation:                  <010> +/-1°  
Size:                           1″ dia.  x 0.35 mm
Conduction Type:      Semi-insulating, Fe-doped
Doping density (Fe) :  ~5E17 by SIMS.
Front surface finish:   Epi-ready, RMS <0.5nm 
Back surface finish:    Optical polished

Ga2O3-ß Single Crystal Substrate, <010>+/-1° ori, 10x10x0.35mm, 2SP, Research grade with “Twin”

Substrate Specifications:
Chmistry:                    ß-Ga2O3 
Structure:                    Monoclinic
Lattice Constant:         a=12.23A, b=3.04A, c=5.80A, ß=103.7°
Orientation:                  <010> +/-1°  
Size:                          10×10 x 0.35 mm
Conduction Type:      Semi-insulating, Fe-doped
Doping density (Fe) :  ~5E17 by SIMS.
Front surface finish:   Epi-ready, RMS <0.5nm 
Back surface finish:    Optical polished

Ga2O3-ß Single Crystal Substrate, <010>+/-1° ori, 5 x 5 x 0.35mm, 2SP, Research grade with “Twin”

Substrate Specifications:
Chmistry:                    ß-Ga2O3 
Structure:                    Monoclinic
Lattice Constant:         a=12.23A, b=3.04A, c=5.80A, ß=103.7°
Orientation:                  <010> +/-1°  
Size:                          5 x 5 x 0.35 mm
Conduction Type:      Semi-insulating, Fe-doped
Doping density (Fe) :  ~5E17 by SIMS.
Front surface finish:   Epi-ready, RMS <0.5nm 
Back surface finish:    Optical polished

Ga2O3-ß Single Crystal Substrate, <100>+/-1° 10x10x0.75mm, 1SP

Substrate Specifications:
Chmistry:                    ß-Ga2O3 ( Made in China)
Structure:                    Monoclinic
Lattice Constant:         a=12.23A, b=3.04A, c=5.80A, ß=103.7°
Orientation:                  <100>   +/-1°   ( Please pay attention a, b, c axis defination above )
Type/Dopant:               N type 
Size:                          10×10 x 0.7-0.8 mm
Polish:                        one side polished
Resistivity:                <=0.2 ohm.cm
Surface roughness:      < 5A

Ga2O3-ß Single Crystal Substrate, <-201> ori, 10x10x0.6mm, 1SP

Substrate Specifications:
Chmistry:                    ß-Ga2O3 ( Made in China)
Structure:                    Monoclinic
Lattice Constant:         a=12.23A, b=3.04A, c=5.80A, ß=103.7°
Orientation:                  <-201>   +/-0.7°   ( Please pay attention a, b, c axis defination above )
Type/Dopant:               N type/Sn-doped
Size:                          10×10 x 0.6 mm
Polish:                        one side polished
Surface roughness:      < 5A

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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