GaAs (110) crystal

GaAs (110) crystal

PAM XIAMEN offers GaAs (110) crystal.

GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2″D x 2.8 mm, as cut
GaAs, (110) ori. un-doped, 5x5x5.5-5.6mm, 2sp
GaAs, (110) ori. un-doped, 5x6x2.0mm, 2sp
GaAs, VGF Grown (110) ori. un-doped, 10x10x0.5mm, 1sp
GaAs, VGF Grown (110) ori. un-doped, 5x5x0.5mm, 1sp
GaAs, VGF Grown (110) ori. un-doped, Semi-Insulating, 20x20x0.5mm, 1sp
GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp
GaAs – VGF (110) orientation, Zn-doped, P-type, 3″ dia x 0.5mm, 1sp
GaAs – VGF (110) orientation, Zn-doped, P-type, 3″ dia x 0.5mm, 2sp
GaAs VGF Grown (110) orientation, Un-doped, Semi-Insulating, 100mm dia x 0.5mm, 1sp
GaAs VGF Grown(110) orientation, un-doped, Semi-Insulating, 3″ dia x 0.5mm, 1sp
GaAs, VGF Grown (110) ori. N type, Si-doped, 2″ dia x 0.35mm, 1sp
GaAs, VGF Grown (110) ori. Zn-doped, P-type, 2″ dia x 0.5mm, 1sp,
GaAs, VGF Grown (110) ori. N type, Si-doped, 10 x 5 x 0.3 mm, 2sp
GaAs, VGF Grown (110) ori. N type, Si-doped, 5 x 5 x 0.3 mm, 2sp
GaAs, VGF Grown (110) orientation, SI, undoped, 2″ dia x 0.5mm, 2sp
GaAs, VGF Grown (110) orientation, SI, undoped, 2″ dia x 0.5mm, 1sp,

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

2019-04-22

Share this post

Related Posts

4″ Silicon Wafer-3

PAM XIAMEN offers 4″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity  Thickness Surface Grade 100 P Boron CZ -100 1-20 43768 P/P PRIME 100 P Boron CZ -100 1-20 40-60 P/P PRIME 100 P Boron CZ -100 1-20 80-100 P/P PRIME 100 P Boron CZ -100 1-20 180-200 P/P PRIME 100 P Boron CZ -100 1-20 300-350 P/E PRIME 100 P Boron CZ -100 1-20 300-350 P/P PRIME 100 P Boron CZ -100 1-20 350-400 P/P PRIME 100 P Boron CZ -100 1-20 375-425 P/E PRIME 100 P Boron CZ -100 .001-.005 450-500 P/P PRIME 100 P Boron CZ -100 .005-.02 450-500 P/P PRIME 100 P Boron FZ -100 >3000 450-500 P/P PRIME 100 P Boron CZ -100 1-20 450-500 P/P PRIME 100 P Boron CZ -100 .001-.005 500-550 P/E PRIME 100 P Boron CZ -100 .005-.02 500-550 P/E PRIME 100 P Boron FZ -100 >3000 500-550 P/E PRIME 100 P Boron CZ -100 1-20 500-550 P/E PRIME 100 P Boron CZ -100 1-20 500-550 P/E/DTOx PRIME 100 P Boron CZ -100 1-20 500-550 P/E/Ni PRIME 100 P Boron CZ -100 1-20 500-550 P/E/WTOx 100 P Boron CZ -100 1-20 950-1050 P/E PRIME 100 P Boron CZ -100 1-20 950-1050 P/P PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]

2019-03-04meta-author
4″ FZ Prime Silicon Wafer-4

PAM XIAMEN offers 4″FZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm, FZ Intrinsic undoped Si:-[111]±0.5°, Ro > 10,000 Ohmcm, TTV<5μm, Bow<20μm, Warp<30μm, One-side-Epi-Ready-polished, back-side etched, SEMI Flats, Sealed in Empak or equivalent cassette, MCC Lifetime>1,000μs. For more information, please visit our [...]

2019-07-05meta-author
Bi2Se3 – Can’t Offer Temporarily

PAM XIAMEN offers high-quality Bi2Se3. Molar mass:   654.8 g/mol  Appearance:  Dull grey Lattice Parameters:  a=4.14 A,  c=28.7 A Density: 6.82 g/cm^3 Melting point:710 °C (1,310 °F; 983 K) Structure: Hexagonal Displaying products 1 – 1 of 1 results Bi2Se3 Single crystal (0001) orn. 10x10x1.0 mm, both sides polished [...]

2019-04-17meta-author
TiO2 Coated Sodalime Glass

PAM XIAMEN offers TiO2 Coated Sodalime Glass. TiO2( 150nm) Coated Sodalime Glass 1″ x1″x 0.7mm TiO2 Coated  Sodalime Glass Dimension:   1″ x1″x 0.7mm Polish: both sides are optically clear  Nominal TiO2 film thickness: 150 nm +/- 10%  For more information, please visit our website: [...]

2019-04-29meta-author
Copper Thin Film on Sapphire Substrate for Graphene Growth

High quality large-area single crystal copper substrate is an effective method for preparing high-quality large-area single crystal graphene. There are several main methods for preparing single crystal copper: 1) Commercial single crystal copper is mostly produced by using the high-temperature hot casting mode continuous [...]

2024-03-12meta-author
2″ FZ Silicon Ingot with Diameter 50mm

PAM XIAMEN offers 2″ FZ Silicon Ingot with Diameter 50mm Silicon ingot, per SEMI, G Ø50mm FZ n-type Si:P[100]±2.0°, Ro=(1,500-7,000)Ohmcm Ground Ingot, NO Flats, MCC Lifetime>1000µs, Oxygen<1E16/cc, Carbon<1E16/cc, Adequately packed, CofC: present. For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

2020-05-27meta-author