GaAs (110) crystal

PAM XIAMEN offers GaAs (110) crystal.

GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2″D x 2.8 mm, as cut
GaAs, (110) ori. un-doped, 5x5x5.5-5.6mm, 2sp
GaAs, (110) ori. un-doped, 5x6x2.0mm, 2sp
GaAs, VGF Grown (110) ori. un-doped, 10x10x0.5mm, 1sp
GaAs, VGF Grown (110) ori. un-doped, 5x5x0.5mm, 1sp
GaAs, VGF Grown (110) ori. un-doped, Semi-Insulating, 20x20x0.5mm, 1sp
GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp
GaAs – VGF (110) orientation, Zn-doped, P-type, 3″ dia x 0.5mm, 1sp
GaAs – VGF (110) orientation, Zn-doped, P-type, 3″ dia x 0.5mm, 2sp
GaAs VGF Grown (110) orientation, Un-doped, Semi-Insulating, 100mm dia x 0.5mm, 1sp
GaAs VGF Grown(110) orientation, un-doped, Semi-Insulating, 3″ dia x 0.5mm, 1sp
GaAs, VGF Grown (110) ori. N type, Si-doped, 2″ dia x 0.35mm, 1sp
GaAs, VGF Grown (110) ori. Zn-doped, P-type, 2″ dia x 0.5mm, 1sp,
GaAs, VGF Grown (110) ori. N type, Si-doped, 10 x 5 x 0.3 mm, 2sp
GaAs, VGF Grown (110) ori. N type, Si-doped, 5 x 5 x 0.3 mm, 2sp
GaAs, VGF Grown (110) orientation, SI, undoped, 2″ dia x 0.5mm, 2sp
GaAs, VGF Grown (110) orientation, SI, undoped, 2″ dia x 0.5mm, 1sp,

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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