GAAS GALLIUM ARSENIDE CRYSTAL SUBSTRATES

PAM XIAMEN offers GaAs Gallium Arsenide crystal substrates.

MAIN PARAMETERS FOR GAAS GALLIUM ARSENIDE CRYSTAL SUBSTRATES
single crystal Dopant Conduction type Carrier concentration  cm-3 Growth method
Max size
GaAs None SI / LEC
Si N >5×10^17 HB
Cr SI / Dia. 3″
Fe N ~2×10^18
Zn P >5×10^17
Sizes (mm) 25×25×0.5mm, 10×10×0.5mm, 10×5×0.5mm, 5×5×0.5mm, 2 inch diameter
Special size and orientation options are available upon request
Surface Roughness Surface roughness(Ra): <= 5A
Polishing Single or double side polished

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

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