PAM XIAMEN offers Gallium Arsenide substrate with various sizes and low density. The GaAs wafer with the conductivity of N type, P type, or semi-insulating is for sale. In addition, you can offer your own wafer design to customize.

1. Main Parameters of Gallium Arsenide Substrate

MAIN PARAMETERS FOR GAAS GALLIUM ARSENIDE ELECTRONIC GRADE CRYSTAL SUBSTRATES
single crystal	Dopant	Conduction type		Carrier concentration  cm-3	Growth method
					Max size
GaAs	None	SI		/	VGF
	Si	N		>5×10^17	VGF
	Cr	SI		/	VGF
	Fe	N		~2×10^18
	Zn	P		>5×10^17
Sizes (mm)			25×25×0.5mm, 10×10×0.5mm, 10×5×0.5mm, 5×5×0.5mm, 2 inch diameter
			Special size and orientation options are available upon request
Surface Roughness			Surface roughness(Ra): <= 5A
Polishing			Single or double side polished

 

2. Gallium Arsenide Wafer Substrate Standard

This standard applies to gallium arsenide single crystals and wafers used in optoelectronic devices and sensing elements. The standard is strictly obeyed by PAM-XIAMEN during the gallium arsenide substrate manufacturing process.

2.1 GaAs Wafer Electrical Performance

The electrical properties of gallium arsenide single crystal wafer should meet the requirements of Table 1.

Table 1 Electrical Performance of Gallium Arsenide Substrate

Conductivity Type	Dopant	Carrier Concentration cm3	Mobility cm3/(V. s)
N	Si	8×1016~5×1018	≥1 100
	Te	8×1016~5×1018	≥1 500
P	Zn	1×1019~5×1019	≥50

 

2.2 GaAs Crystal Substrate Dislocation Density

Substrate of gallium arsenide is divided into 2 levels according to the dislocation density, which should meet the requirements of Table 2.

Table 2 Gallium Arsenide Dislocation Density

Grades	Dislocation Density cm–2
l	≤5 000
ll	≤10 000

 

2.3 Gallium Arsenide Cutting Wafer Thickness

The thickness of the gallium arsenide substrate is 170um~650um, and the allowable deviation of the thickness is 15um~30um. The common thickness and allowable deviation of the GaAs substrate is 210um ± 20um, 280um ± 20um, 320um ± 20um, 350um ± 15um and 420um ± 15um.

2.4 GaAs Substrate Orientation Deviation

The deviation of the GaAs cutting wafer orientation and its allowable deviation should meet the requirements of Table 4. If there are special requirements, it shall be negotiated by the supplier and the buyer and indicated in the order form (or contract).

Table 4 Crystal Orientation Deviation and Allowable Deviation of GaAs Wafer Substrate

Crystal Orientation Deviation	Allowable Deviation
(100)	± 0.5°
(111)	± 0.5°
(100) Deflection 1°~6° to (110)	± 0.5°
(100) Deflection 1°~20° to (111)	± 0.5°

 

2.5 Reference Plane Orientation and Length of Gallium Arsenide Crystal Wafer

The orientation of the reference plane of the gallium arsenide single crystal substrate should meet the requirements of Table 5.

Table 5 Reference Plane Orientation of GaAs Thin Film

Characteristic	The main reference plane is perpendicular to the V-groove		The main reference plane is perpendicular to the dovetail groove
	Main reference plane	Secondary reference surface	Main reference plane	Secondary reference surface
Orientation	(011) ±0.5° or projection direction on the wafer surface	Rotate 90°± 5° counterclockwise from the main reference surface	(011) ±0.5° or projection direction on the wafer surface	Rotate 90°±5° clockwise from the main reference surface
Features	Belongs to an As surface	Belongs to a Ga surface	Belongs to a Ga surface	Belongs to an As surface
Relationship with Groove	Perpendicular to the V-groove	Perpendicular to dovetail	Perpendicular to dovetail	Perpendicular to the V-groove

 

2.6 Test Method for Gallium Arsenide Crystal and Wafer

The inspection of the surface quality of the gallium arsenide monocrystalline wafer substrate is carried out daily under good lighting;

The measurement of the diameter of the GaAs sheet shall be carried out with a vernier caliper with an graduation value not greater than 0.02mm;

The thickness of gallium arsenide thin film is measured with a micrometer with a graduation of 0.001 mm;

The measurement of the length of the reference surface of the gallium arsenide is carried out with a vernier caliper with an graduation value not greater than 0.02mm;

Inspection of the surface quality of gallium arsenide substrate is carried out daily under good lighting.

For more information, please contact us email at [email protected] and [email protected].