PAM XIAMEN offers GaAs Gallium Arsenide crystal substrates.
|MAIN PARAMETERS FOR GAAS GALLIUM ARSENIDE CRYSTAL SUBSTRATES|
|single crystal||Dopant||Conduction type||Carrier concentration cm-3||Growth method|
|Sizes (mm)||25×25×0.5mm, 10×10×0.5mm, 10×5×0.5mm, 5×5×0.5mm, 2 inch diameter|
|Special size and orientation options are available upon request|
|Surface Roughness||Surface roughness(Ra): <= 5A|
|Polishing||Single or double side polished|
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.