GaAs wafer is an important III-V compound semiconductors, a sphalerite lattice structure with lattice constant of 5.65 x 10-10m, melting point of 1237 C and band gap of 1.4 electron volts.Gallium arsenide wafer can be made into semi-insulating materials with resistivity higher than silicon and germanium by three orders of magnitude, which can be used to fabricate integrated circuit substrates, infrared detectors, gamma photon detectors and so on. Because its electron mobility is 5-6 times larger than that of silicon, it has been widely used in the fabrication of microwave devices and high-speed digital circuits. Semiconductor devices made of GaAs have the advantages of high frequency, high temperature, good low temperature performance, low noise and strong radiation resistance. In addition, it can also be used to fabricate transfer devices – bulk effect devices.
(Gallium Arsenide) GaAs Wafer and Epitaxy:GaAs wafer,N type,P type or semi-insulating,size from 2″ to 6″; GaAs epi wafer for HEMT, pHEMT,mHEMT and HBT
Epi Wafer for Laser Diode
GaAs based LD epitaxy wafer, which can generate stimulate emission, is widely used for fabricating laser diode since the superior GaAs epitaxial wafer properties make the device a low energy consumption, high efficiency, long lifetime and etc. In addition to gallium arsenide LD epi wafer, commonly used semiconductor materials are cadmium sulfide (CdS), indium phosphide (InP), and zinc sulfide (ZnS).
GaAs (Gallium Arsenide) Wafers
As a leading GaAs substrate supplier, PAM-XIAMEN manufactures Epi-ready GaAs(Gallium Arsenide) Wafer Substrate including semi-conducting n type, semi-conductor undoped and p type with prime grade and dummy grade. The GaAs substrate resistivity depends on dopants, Si doped or Zn doped is (0.001~0.009) ohm.cm, undoped one is >=1E7 ohm.cm. The GaAs wafer crystal orientation should be (100) and (111). For (100) orientation, it can be 2°/6°/15° off. The EPD of GaAs wafer normally is <5000/cm2 for LED or <500/cm2 for LD or microelectronics.
PAM-XIAMEN is manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom GaAs epiwafer structures to meet customer specifications, please contact us for more information.