GaAs Wafer

GaAs wafer is an important III-V compound semiconductors, a sphalerite lattice structure with lattice constant of 5.65 x 10-10m, melting point of 1237 C and band gap of 1.4 electron volts.Gallium arsenide wafer can be made into semi-insulating materials with resistivity higher than silicon and germanium by three orders of magnitude, which can be used to fabricate integrated circuit substrates, infrared detectors, gamma photon detectors and so on. Because its electron mobility is 5-6 times larger than that of silicon, it has been widely used in the fabrication of microwave devices and high-speed digital circuits. Semiconductor devices made of GaAs have the advantages of high frequency, high temperature, good low temperature performance, low noise and strong radiation resistance. In addition, it can also be used to fabricate transfer devices – bulk effect devices.

(Gallium Arsenide) GaAs Wafer and Epitaxy:GaAs wafer,N type,P type or semi-insulating,size from 2″ to 6″; GaAs epi wafer for HEMT, pHEMT,mHEMT and HBT

  • Epi Wafer for Laser Diode

  • GaAs Wafer (Gallium Arsenide)

    GaAs (Gallium Arsenide) Wafers

    PAM-XIAMEN manufactures Epi-ready GaAs(Gallium Arsenide) Wafer Substrate including semi-conducting n type, semi-conductor undoped and p type with prime grade and dummy grade. The resistivity of GaAs wafer depends on dopants, Si doped or Zn doped is (0.001~0.009) ohm.cm, undoped one is >=1E7 ohm.cm. the orientation of Gallium Arsenide wafer should be (100) and (111), for (100)orientation, it can be 2°/6°/15° off. The EPD of GaAs wafer normally is <5000/cm2 for LED or <500/cm2 for LD or microelectronics.

  • GaAs Epiwafer

    We are manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom structures to meet customer specifications.please contact us for more information.