GaAs/AlGaAs/GaAs epi wafer

GaAs/AlGaAs/GaAs epi wafer

We can offer 2″ or 4” GaAs/AlGaAs/GaAs epi wafer, please see below typical structure:

Structure 1:

2”GaAs/AlGaAs/GaAs epi wafer

S.NoParametersSpecifications
1GaAs substrate layer thickness500μm
2layer thickness2μm
3GaAs top layer thickness220 nm
4Mole fraction of Al (x)0.7
5Doping levelIntrinsic

Structure 2:

2DEG GaAs/AlGaAs epi wafer

PAM-190224-GAAS-EPI

StructureCompositionThickness(nm)
CapGaAs10
Doping carrierAl0.28GaAs1-0.28:Si 1.4×1018cm-3
spacerAlo.28GaAs1-0.28
channelGaAs
SLGaAs/Al0.28GaAs1-0.28 24A×24A
bufferGaAs90
SubSI GaAs(100)

 

Structure 3:

4″diameter AlGaAs/GaAs Wafer.
The structure (top to bottom) PAM-190605-ALGAAS:
GaAs (10 nm)
AlGaAs (30 nm) with 30% Al and 70% Ga, doped at 1E18 cm^-3
Undoped AlGaAs (15 nm) (30% Al and 70% Ga)
GaAs (500 nm)
GaAs substrate

Remark: mobility and 2DEG concentration can be tested if necessary

Structure 4:

GaAs/AlGaAs epi stack wafers PAM-190711-ALGAAS
150nm of GaAs layer Standard error 3%
5um Al0.8Ga0.2As layer
2” GaAs substrate (backside polished)~ 330um

Expanation: the epi stack grows on top of GaAs substrate and contains 5 um of Al0.8Ga0.2As sacrificial layer and 150nm of GaAs layer on top of the sacrificial layer for the MBE-grown wafers

Source: PAM-XIAMEN

For more information, please contact us email at [email protected] and [email protected].

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