GaAs/AlGaAs/GaAs epi wafer

GaAs/AlGaAs/GaAs epi wafer

We can offer 2″ or 4” GaAs/AlGaAs/GaAs epi wafer, please see below typical structure:


2”GaAs/AlGaAs/GaAs epi wafer

S.No Parameters Specifications
1 GaAs substrate layer thickness 500μm
2 layer thickness 2μm
3 GaAs top layer thickness 220 nm
4 Mole fraction of Al (x) 0.7
5 Doping level Intrinsic



4″diameter AlGaAs/GaAs Wafer.
The structure (top to bottom) PAM-190605-ALGAAS:
GaAs (10 nm)
AlGaAs (30 nm) with 30% Al and 70% Ga, doped at 1E18 cm^-3
Undoped AlGaAs (15 nm) (30% Al and 70% Ga)
GaAs (500 nm)
GaAs substrate

Remark: mobility and 2DEG concentration can be tested if necessary


GaAs/AlGaAs epi stack wafers PAM-190711-ALGAAS
150nm of GaAs layer Standard error 3%
5um Al0.8Ga0.2As layer
2” GaAs substrate (backside polished)~ 330um

Expanation: the epi stack grows on top of GaAs substrate and contains 5 um of Al0.8Ga0.2As sacrificial layer and 150nm of GaAs layer on top of the sacrificial layer for the MBE-grown wafers

If you need more information about GaAs/AlGaAs/GaAs epi wafer, please visit our website:
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