PAM XIAMEN Offers GaAsP wafer,size from 2”to 3”

PAM XIAMEN Offers GaAsP wafer,size from 2”to 3”

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaAsP materials and other related products and services announced the new availability of 2″-3” size is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.Dr. Shaka, said, “We are pleased to offer GaAsP wafers to our customers including many who are developing better and more reliable for red-light emitting devices. Our GaAsP material has excellent properties, as uniform in composition and/or uniform in external quantum efficiency. The availability improve boule growth and wafering processes.” and “Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our GaAsP materialare natural by products of our ongoing efforts,  currently we are devoted to continuously develop more reliable products.”

PAM-XIAMEN’s improved GaAsP product line has benefited from strong tech. support from Native University and Laboratory Center.

Now it shows an example as follows:

About Xiamen Powerway Advanced Material Co., Ltd

Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

About GaAsP

Gallium arsenide phosphide (GaAs1−xPx) is a semiconductor material, an alloy of gallium arsenide and gallium phosphide. It exists in various composition ratios indicated in its formula by the fraction x.Gallium arsenide phosphide is used for manufacturing red, orange and yellow light-emitting diodes. It is often grown on gallium phosphide substrates to form a GaP/GaAsP heterostructure. In order to tune its electronic properties, it may be doped with  nitrogen (GaAsP:N).

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