Optical and electronic simulation of gallium arsenide/silicon tandem four terminal solar cells

  • Home
  • News
  • Optical and electronic simulation of gallium arsenide/silicon tandem four terminal solar cells
Optical and electronic simulation of gallium arsenide/silicon tandem four terminal solar cells
A tandem solar cell in a mechanical (stack like) arrangement of gallium arsenide and silicon solar cells is evaluated as a pathway towards higher efficiency terrestrial solar cells. In this work the technical feasibility of the tandem solar cell is investigated. Here we report on detailed electrical and optical simulations of this structure quantifying various theoretical and practical loss mechanisms in the interface and in the device and indicate that an efficiency improvement of 5.13% would be attainable with the present generation of gallium arsenide and silicon solar cells in this configuration. The optical and electrical parameters for gallium arsenide and silicon simulation models were extracted from experimental devices and material vendors. The developed simulation models were validated by comparing the performance of standalone gallium arsenide and silicon solar cells with experimental devices reported in the literature.
Highlights
• Gallium arsenide/silicon solar cells in a stack-like architecture were evaluated.
• Detailed optical and electronic simulation models of the devices were developed.
• Optical and electrical losses in the device were quantified.
• A device efficiency of 28.5% at 1 sun was obtained, with Si contributing 5.13%.
Source: Solar Energy
If you need more information about Optical and electronic simulation of gallium arsenide/silicon tandem four terminal solar cells, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com
2013-09-24

Share this post

Related Posts

Ceramic Substrate-7

PAM XIAMEN offers Pyrolytic Graphite Substrate. Pyrolytic Graphite is a unique form of graphite manufactured by decomposition of a hydrocarbon gas at very high temperature in a vacuum furnace. It is nucleated on substrate and grown with texture along C axis . The result is an [...]

2019-04-18meta-author
Co Metallic Substrate

PAM XIAMEN offers Co Metallic Substrate. Co Single Crystal Substrate (100) 10×10 x1.0 mm, 1 side polished Co Single Crystal Substrate (111) 10×10 x 1.0 mm, 1 side polished Co Metallic Substrate (polycrystalline): 10×10 x 1.0 mm, 1 side polished Cr Metallic Substrate ( [...]

2019-05-08meta-author
A process model of wafer thinning by diamond grinding

A process model of wafer thinning by diamond grinding This paper is to develop and investigate a wafer thinning process model (WTPM) to integrate the wafer thickness into set-up parameters and predict total thickness variation (TTV) of ground wafers with modification of the wafer grinding [...]

2013-10-29meta-author ,
Precipitation in low temperature grown GaAs

Precipitation in low temperature grown GaAs The precipitation of arsenic in GaAs epitaxially grown at low temperature (LT GaAs) has been studied as a function of the post-growth annealing temperature by three independent methods: transmission electron microscopy (TEM), Raman scattering, and for the first time [...]

2014-03-12meta-author
2″ Silicon Wafer-3

PAM XIAMEN offers 2″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity  Thickness Surface Grade 50.8 P Boron CZ -100 1-20 140-160 P/P PRIME 50.8 P Boron FZ -100 >1000 200-500 P/P PRIME 50.8 P Boron FZ -100 >3000 225-275 P/P PRIME 50.8 P Boron CZ -100 1-20 225-275 P/P PRIME 50.8 P Boron CZ -100 .001-.005 250-300 P/E PRIME 50.8 P Boron CZ -100 .005-.02 250-300 P/E PRIME 50.8 P Boron FZ -100 >3000 250-300 P/E PRIME 50.8 P Boron CZ -100 1-20 250-300 P/E PRIME 50.8 P Boron CZ -100 1-20 250-300 P/E/DTOx PRIME 50.8 P Boron CZ -100 1-20 250-300 P/E/Ni PRIME 50.8 P Boron CZ -100 1-20 250-300 P/E/OX PRIME 50.8 P Boron CZ -100 1-20 250-300 P/E/WTOx 50.8 P Boron CZ -100 .001-.005 275-325 P/E PRIME 50.8 P Boron CZ -100 450-500 P/P PRIME 50.8 P Boron FZ -100 4000-10000 475-525 P/P PRIME 50.8 P Boron CZ -100 1-20 500-550 P/E PRIME 50.8 P Boron CZ -100 1-20 950-1000 P/P PRIME 50.8 P Boron CZ -100 1-20 1000-1050 P/E PRIME 50.8 P Boron CZ -111 1-20 225-275 P/P PRIME 50.8 P Boron CZ -111 1-20 250-300 P/E PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]

2019-02-27meta-author
Formation of InAs quantum dots on low-temperature GaAs epi-layer

Formation of InAs quantum dots on low-temperature GaAs epi-layer InAs self-organized quantum dots (QDs) grown on annealed low-temperature GaAs (LT-GaAs) epi-layers and on normal temperature GaAs buffer layers have been compared by transmission electron microscopy (TEM) and photoluminescence (PL) measurements. TEM evidences that self-organized QDs [...]

2014-02-28meta-author