PAM-XIAMEN, one of leading gallium arsenide wafer manufacturers, can offer Gallium Arsenide(GaAs) wafer with high mobility. Normally mobility of n type/Si doped GaAs is above 1000cm2/V.s, mobility of p type/Zn doped GaAs is above 50~120cm2/V.s,and mobility of undoped GaAs is require to above 3500cm2/V.s, but we can select material and get high mobility >4500 or >5000cm2/V.s even if necessary.
1. Specification of 4-inch Gallium Arsenide(GaAs) wafer with high mobility:
Method: VGF
Diameter: 100.0±0.2 mm
Type: S-I, undoped
Orientation: (100)±0.3° towards (110)
Resistivity: >0.8*10^8 Ohm*cm
Mobility: 4800cm2/(V*s)
EPD : <= 800 cm-2
Thickness: 600±25 um
BOW: <= 4 um
Warp: <= 5 um
TTV: <= 3 um
TIR: <= 3 um
LFPD: <= 1 um
LTV: <= 1.5um
PLTV: >90% on square 15*15mm
Particles: <100pcs/wafer (for particles size >0.28 um), Haze <5ppm
OF: EJ[0-1-1] ± 0,5°/ 32.5 ±1.0mm
IF: EJ[0-1-1] ± 0.5°/ 18.0 ±1.0mm
Front Side: polished, epi-ready
Back side: polished
Laser Marking: on back side
2. Comparison between Undoped GaAs Wafer and Si Doped GaAs Wafer
Compared with the undoped one, the mobility of the Si doped Gallium Arsenide (GaAs) wafer is lower. More details, please see the table below:
| Parameter | Customer’s Requirements | Guaranteed/Actual Values | UOM | ||
| Growth Method: | VGF | VGF | |||
| Conduct Type: | S-C-N | S-C-N | |||
| Dopant: | GaAs-Si | GaAs-Si | |||
| Diameter: | 76.2±0.1 | 76.2±0.1 | mm | ||
| Orientation: | <100>±0.5° | <100>±0.5° | |||
| OF location/length; | EJ[0-1-1]±0.5°/22±2 | EJ[0-1-1]±0.5°/22±2 | |||
| IF location/length: | EJ[0-1 1]±0.5°/11±2 | EJ[0-1 1]±0.5°/11±2 | |||
| lngot CC: | Min: 0.5E18 | Max: 2.0E18 | Min: 0.6E18 | Max:2.0E18 | |
| Resistivity: | Min: 1E-3 | Min: 1.6E-3 | Max:4.2E-3 | Ohm*cm | |
| Mobility: | Min: 1500 | Min: 1810 | Max: 2407 | cm2/v-s | |
| EPD: | Max: 10000 | Min: 50 | Max: 300 | /cm2 | |
| Thickness: | 400±20 | 400±20 | um | ||
| TTV: | Max:10 | Max:10 | um | ||
| TIR: | Max:15 | Max:15 | um | ||
| Bow: | Max:15 | Max:15 | um | ||
| Warp: | Max:15 | Max:15 | um | ||
| Edge Rounding: | 0.25 | 0.25 | mmR | ||
| Laser Marking: | N/A | N/A | |||
| Surface Finish-front: | Polished | Polished | |||
| Surface Finish-back: | Etched | Etched | |||
Remark: Mobility refers to the average drift velocity of carrier produced under unit electric field intensity. Mobility represents the carrier conductivity, which is determined by the carrier concentration. The mobility of general semiconductor materials is usually 10^2-10^6 cm2 / V · s. Mobility is an important parameter to characterize semiconductor. The higher the mobility is, the faster the device runs and the higher the cut-off frequency is. The electronic effective mass of Gallium Arsenide (GaAs) is much smaller than that of silicon, so GaAs is used to make high frequency devices.
3. Applications of Gallium Arsenide(GaAs) Wafer with High Mobility
The electron mobility of gallium arsenide material is about 6 times that of silicon, and it has a direct band gap. Therefore, GaAs-based devices have high-frequency and high-speed optoelectronic properties relative to silicon-based devices. As a result, gallium arsenide wafers are widely used in the fields of optoelectronics and microelectronics, and are the key substrate material for making semiconductor light-emitting diodes and communication devices. Gallium arsenide(GaAs) wafer with high mobility makes small and medium power microwave devices lower power loss, so it occupies a dominant position in the fields of mobile phone communications, local area wireless networks, GPS and automotive radars.
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.