PAM-XIAMEN can offer Gallium Oxide (chemical formula: Ga2O3) wafer. Currently, the third-generation semiconductors represented by silicon carbide (SiC) and gallium nitride (GaN) have received widespread attention. High hopes are placed on the application of SiC and GaN in the high power, high temperature, high pressure occasions(like new energy vehicles, electric energy) and charging field. The academic, investment and industry have recognized that they will play a role that traditional silicon devices cannot achieve. In recent years, Japanese scientists have made great progress in the research of gallium oxide (Ga2O3, later referred to as GaO, in contrast to GaN), bringing this fourth-generation semiconductor material into people’s field of vision. Compared with SiC and GaN, Ga2O3 substrate has better characteristics, such as wider band gap, high voltage resistance, high power, and extremely low manufacturing cost, which has a unique advantage in power applications. Therefore, there are more and more researches on the fourth generation semiconductor —— gallium oxide wafer in recent years. The specifications of gallium oxide thin film PAM-XIAMEN can offer are as follows:
1. Specifications of Gallium Oxide Wafer
Item 1: PAM-210416-GAO
Prime Grade Gallium Oxide(Ga2O3) Wafer
Item 2: PAM-210416-GAO
Dummy Grade Gallium Oxide(Ga2O3) Wafer
2. Gallium Oxide Properties in Physics
The gallium oxide melting point is 1740°C;
Easily soluble in alkali metal hydroxides and dilute inorganic acids;
Crystal type: α-Ga2O3 is a hexagonal crystal type, and β-Ga2O3 is a monoclinic crystal type;
Solubility: insoluble in water. Slightly soluble in hot acid or alkali solution.
3. Development of Gallium Oxide Materials and Gallium Oxide Devices
Currently, the low defect density of gallium oxide substrates can reach 4 inches. The average breakdown electric field of gallium oxide wafer has reached 5 MV/cm, and the horizontal and vertical gallium oxide Schottky diodes have achieved breakdown voltages of more than 3 kV and 2.2 kV, respectively. At the same time, the depletion/enhanced back-gate MOSFET also achieved an output current density exceeding 1.5/1 A/mm, and the horizontal and vertical MOSFETs also achieved a breakdown voltage of 1.8/1 kV in the off state. Meanwhile, gallium oxide high frequency devices achieved ft/fmax = 5.1/17.1 GHz.
Power devices fabricated on Ga2O3 thin film under the same withstand voltage as GaN and SiC, have lower on-resistance, lower power consumption, higher temperature resistance, and can greatly save the power loss during the operation. Therefore, Ga2O3 wafer provides a better A more efficient and energy-saving choice.
4. Gallium Oxide Applications
Gallium oxide single crystal materials have great application potential in power electronic devices. Typical application areas of gallium oxide wafer include: electric vehicles, photovoltaic inverters, high-speed rail power transmission, military electromagnetic railguns, electromagnetic catapults, all-electric naval propulsion, etc. In addition, gallium oxide itself has a characteristic of good radio frequency. Currently due to low cost and the characteristics of low mismatch with GaN, Ga2O3 single crystal substrate can be used for epitaxial substrates of GaN materials. GaN and HEMT have the advantages of high power density, small size, and can work at 40 GHz. They are the good materials for 5G base station strategy amplifiers. The rapid development of the 5G industry will also drive the rapid development of the gallium oxide monocrystalline substrate industry.