Gallium Oxide(Ga2O3) Wafer

PAM-XIAMEN can offer Gallium Oxide wafer (Ga2O3 wafer). Currently, the third-generation semiconductors represented by silicon carbide (SiC) and gallium nitride (GaN) have received widespread attention. High hopes are placed on the application of SiC and GaN in the high power, high temperature, high pressure occasions(like new energy vehicles, electric energy) and charging field. The academic, investment and industry have recognized that they will play a role that traditional silicon devices cannot achieve. In recent years, Japanese scientists have made great progress in the research of gallium oxide (Ga2O3, later referred to as GaO, in contrast to GaN), bringing this fourth-generation semiconductor material into people’s field of vision. Compared with SiC and GaN, Ga2O3 substrate has better characteristics, such as wider band gap, high voltage resistance, high power, and extremely low manufacturing cost, which has a unique advantage in power applications. Therefore, there are more and more researches on the fourth generation semiconductor —— gallium oxide wafer in recent years. The specifications PAM-XIAMEN can offer are as follows:

gallium oxide wafer

Specifications:

Item 1: PAM-210416-GAO

Prime Grade Gallium Oxide(Ga2O3) Wafer

OrientationDopantThickness(mm)SurfaceSize (mm)Parameters
FWHM(arcsec)Ra (nm)Resistivity/Nd-Na
(201)Fe0.6~0.8SSP10×15<350≤0.3/
(201)Sn0.6~0.8SSP10×10<350≤0.3<9E18

 

Item 2: PAM-210416-GAO

Dummy Grade Gallium Oxide(Ga2O3) Wafer

OrientationDopantThickness(mm)SurfaceSize (mm)Parameters
FWHMRa (nm)Resistivity/Nd-Na
(arcsec)
(100)off 6°Fe0.6~0.8SSP10×10<350≤5/
(010)UID0.6~0.8SSP10×10<350≤0.5/
(201)UID0.6~0.8SSP10×15<350≤0.54.13E+17
(010)Sn0.6~0.8SSP10×15<350≤0.52.00E+17
(010)Sn0.6~0.8SSP10×10<350≤0.51.53E+18

 

Gallium oxide single crystal materials have great application potential in power electronic devices. Typical application areas of gallium oxide wafer include: electric vehicles, photovoltaic inverters, high-speed rail power transmission, military electromagnetic railguns, electromagnetic catapults, all-electric naval propulsion, etc. In addition, gallium oxide itself has a characteristic of good radio frequency. Currently due to low cost and the characteristics of low mismatch with GaN, it can be used for epitaxial substrates of GaN materials. GaN and HEMT have the advantages of high power density, small size, and can work at 40 GHz. They are the good materials for 5G base station strategy amplifiers. The rapid development of the 5G industry will also drive the rapid development of the gallium oxide monocrystalline substrate industry.

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