PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ).
PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation.
<=1″ diameter wafers [...]
2019-05-15meta-author
PAM XIAMEN offers 4″ Prime Silicon Wafer Thickness 675 +/- 20 microns.
Wafers 4 inches in a diameter of monocrystalline silicon with an insulating oxide.
100 mm in diameter
The silicon substrate
orientation<100>
resistivity>10Ωcm
The insulating thermal oxidation film thickness 300nm
Polishing: one-sided for [...]
2019-07-02meta-author
PAM XIAMEN offers4″ Silicon EPI Wafer-6
4″ Si epi wafer
Structure:
(Top layer intrinsic Si / Middle layer Phosphorus Doped / Ion Implantation / Si substrate)
Top layer intrinsic Si:
Resistivity≥50Ωcm,
Thickness 5μm,
Residual carrier concentration<1×1014/cm3
Middle layer Phosphorus Doped:
Resistivity around 0.025Ωcm (Phosphorous concentration 7×017/cm3),
Thickness 20μm,
Residual carrier concentration<2.1×1013/cm3
Layer with Ion Implantation: handled [...]
2019-11-01meta-author
The silicon carbide crystal most commonly used as a semiconductor material is 4H-SiC wafer. However, silicon carbide crystals have multiple types. Once the conditions are not well controlled in the process of the silicon carbide crystal growth, the resulting silicon carbide crystal structure may be 3C, 6H, 15R, etc., [...]
2021-04-08meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
4
DSP
Antimony
N+
100
32,5 ± 2,5
110 ± 1
180 ± 5.0 °, 18.00 ± 2.00 mm
0.0 ± 1.0 °
0.010 – 0.020 Ohmcm
100.0 ± 0.5 mm
340 ± 10 µm
2
4
DSP
Antimony
N+
100
32,5 [...]
2019-02-25meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
2″
280
P/E
0.5-0.6
Prime, NO Flats
p-type Si:B
[100]
2″
280
P/E
0.08-0.10
SEMI Prime
p-type Si:B
[100]
2″
1000
P/E
0.073-0.090
SEMI Prime,
p-type Si:B
[100]
2″
250
P/P
0.02-0.04
SEMI Prime
p-type Si:B
[100]
2″
225
P/P
0.015-0.020
SEMI Prime
p-type Si:B
[100]
2″
1000
P/P
0.015-0.045
SEMI Prime,
p-type Si:B
[100]
2″
280
P/P
0.008-0.095
SEMI Prime
p-type Si:B
[100-4°]
2″
300
P/P
0.003-0.004
SEMI Prime,
p-type Si:B
[100-6° towards[110]]
2″
300
P/E
0.0026-0.0029
SEMI Prime
p-type Si:B
[100]
2″
300
P/E
0.0023-0.0029
SEMI Prime
p-type Si:B
[100]
2″
250
P/P
0.001-0.006
SEMI Prime,
p-type Si:B
[100-6° towards[110]]
2″
275
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
280
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
300
P/E
0.001-0.005
Prime, NO Flats
p-type Si:B
[100]
2″
500
P/P
0.001-0.005
SEMI Prime,
p-type Si:B
[111-10° towards[112]]
2″
300
P/E
20-25
SEMI Prime
p-type Si:B
[111]
2″
380
P/P
10-20
SEMI Prime
p-type Si:B
[111-2° towards[112]]
2″
1000
P/P
10-30
SEMI Prime
p-type Si:B
[111]
2″
500
P/P
2.4-2.6
SEMI Prime
p-type [...]
2019-03-07meta-author