PAM XIAMEN offers 2″ Prime Silicon Wafer.
Si wafers
(100)
Dia 2” x 150µm
2 flats
1-20ohm.cm
Type n or p
One side polished
Ra<0.5nm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen [...]
2019-07-01meta-author
PAM XIAMEN offers Silicon Ingots.
Material Description
3″Ø×174mm p-type Si:Ga[100] (1.77-2.13)Ωcm, Ingot “As-Grown”, (82-85)mmØ, RRV=8%, Oxygen=6.2E17/cc
4″Ø×(504+504+523+147+144)mm, p-type Si:B[111], As-Grown, made by Crysteco (5 ing 6c, 10b(Gnd 1F), 14a(Gnd 1F), 21Aa, 30d(Gnd 1F))
3″Ø ingot p-type Si:B[111] ±0.5°, Ro: 1-10 Ohmcm, As-Grown, (3 ingots: 217mm, 32mm, 169mm)
3″Ø×36mm ingot, p-type Si:B[211]±2°, [...]
2019-03-08meta-author
PAM XIAMEN offers Conductive Ceramic Substrates.
8% YSZ Ceramic Substrate 100x100x0.25 mm, fine ground
8% YSZ Ceramic Substrate 2″x 2″x0.5 mm, one side polished
Conductive Ceramic Target (1″ Dx 0.3 mm t )
Conductive Ceramic Separator Sheets w/ optional size for Li-Air & Solid [...]
2019-04-18meta-author
PAM XIAMEN offers BGO, Bismuth germanate, Bi4Ge3O12 Scintillation Crystals.
SPECIFICATIONS:
Crystal structure: Cubic
Lattice Parameter: a=10.518 Å
Density: 7.13(g/cm3)
Hardness: 5(mohs)
Melt point: 1050℃
Index of refraction: 2.15
Radiation length: 1.1cm
Peak of fluorescence spectra : 480nm
Decay time: 300ns
Relative light output(%): 10-14 Nal(Tl)
Energy resolution: 20% @511KV
Crystal orientation: <001>、<110>
Size(mm):Special size and orientation are available upon request
Polishing: Single or double
Packaging: Clean room
MAIN APPLICATIONS
Positron emission tomography (PET)
High-energy physics
Nuclear medicine
Geological prospecting
Gamma pulse spectroscopy
BGO [...]
2019-03-11meta-author
PAM-XIAMEN offers 10*10mm2 undoped Freestanding GaN Substrate:
1. Specification of Undoped Freestanding GaN Wafer
Item
PAM-FS-GaN-50-U
Dimension
10 x 10.5 mm2
Thickness
380+/-50um
Orientation
C plane (0001) off angle toward M-axis 0.35 ±0.15°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5x 106 cm-2 (calculated by CL)*
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
2. Standard Method for Testing Surface Roughness of Undoped Gallium [...]
2020-08-14meta-author
PAM XIAMEN offers high quality GaSb single crystal wafers.
1. Specifications of GaSb Single Crystal Wafers
GaSb undoped
GaSb Wafer (100), undoped, 10x10x0.5 mm ,1sp
GaSb Wafer (100), undoped, 2″x0.45 mm ,1sp
GaSb Wafer (100), undoped, 2″x0.5 mm two sides polished
GaSb Wafer (111)-A, [...]
2019-04-22meta-author