PAM-XIAMEN offers (10-11) Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(10-11)-U
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(10-11) plane off angle toward A-axis 0 ±0.5°
(10-11) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
The epitaxy optimization studies of high-quality n-type AlInN alloys with different indium contents grown on two types of substrates by metalorganic vapor phase epitaxy (MOVPE) were carried out. The effect of growth pressure and V/III molar ratio on growth rate, indium content, and surface [...]
PAM XIAMEN offers 4″CZ Epitaxial Prime Silicon Wafer.
4″ Si epi wafer
Growth Method: CZ
100 +/- 0.5 mm diameter silicon
Orientation <111> 4deg off
P Type Boron doped 0.002 – 0.003 ohm cm
Front side polished – Epi ready
thickness 525 +/-25 um [...]
2019-07-05meta-author
PAM XIAMEN offers Ce:YAG substrate.
Ce:YAG substrate (111) 5 x 5 x 0.5 mm, 2sp
Substrate Specifications
Crystal: Ce: YAG ( 0.2% wt Ce doped)
Size: 5 x 5 x 0.5mm +/-0.05mm
Orientation: (111) +/-0.5 0
Polish: two sides optical polished.
Pack: Packed in 1000 class plastic [...]
2019-04-18meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
Intrinsic Si:-
[100]
4″
500
P/E
FZ 13,000-20,000
SEMI Prime, TTV<5μm, Front-side Prime polish, Back-side light polish
Intrinsic Si:-
[100]
4″
615 ±10
C/C
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
4″
800
C/C
FZ >10,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
4″
525
P/E
FZ >22,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
4″
300
P/E
FZ 20,000-40,000
SEMI, TTV<5μm
Intrinsic Si:-
[111] ±0.5°
4″
450
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
4″
500
P/E
FZ >20,000
SEMI Prime, Extra 3 free non-prime wafers included with 4 prime wafers
Intrinsic Si:-
[111] ±1.0°
4″
500
P/P
FZ >15,000
SEMI Prime, TTV<5μm
p-type Si:B
[110] ±0.25°
4″
525
P/E
5-10
SEMI [...]
2019-03-05meta-author
THz Generation Process in LT-GaAs
Optical down-conversion is the most successful commercial technique for THz generation using Low temperature grown GaAs (LT-GaAs). The technique is often known as Terahertz Time-Domain Spectroscopy (THz-TDS). This technique works by optical pulse excitation of a photoconductive switch. Here, a [...]