Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process

  • Home
  • News
  • Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process

Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process

MOS SiO2/GaN structures were fabricated with different surface preparation and different PECVD processes for the dielectric thin film deposition (ECR-PECVD and ICP-PECVD in continuous and pulsed modes). On the basis of C-V curves, the surface preparation steps, involving chemical etching with BOE, UV-Ozone oxidation and oxygen plasma oxidation, were compared in terms of resulting effective charge and interface trap density. A good SiO2/GaN interface quality was achieved for N-type MOS capacitances obtained both with continuous‑ICP‑PECVD and ECR-PECVD deposition of the SiO2 dielectric. However, the interface quality is greatly reduced for MOS capacitors fabricated on P-type GaN.

Source:Daniel Alquier

If you need more information about Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process, please visit our website:https://www.powerwaywafer.com/, send us email at sal[email protected] or [email protected]

2013-09-04

Share this post

Related Posts

Silicon Ingots-7

PAM XIAMEN offers Silicon Ingots. Material Description 4″Ø×219mm p-type Si:B[110]±1.5°, (59-67)Ohmcm, RRV<2.4%, One SEMI Flat, Diameter=(100.6-100.8) mm, C<3E16/cc, O2<9E17/cc 4″Ø ingot p-type Si:B[110] ±2°, Ro: 0.001-0.010 Ohmcm, Ground, SEMI 4″Ø×(504+504+523+147+144)mm, p-type Si:B[111], As-Grown, made by Crysteco (5 ing 6c, 10b(Gnd 1F), 14a(Gnd 1F), 21Aa, 30d(Gnd 1F)) 4″Ø ingot p-type Si:B[111], [...]

2019-03-08meta-author
100mm (4 Inch) Silicon Wafers-4

PAM XIAMEN offers 100mm Si wafers. Please send us email at [email protected] if you need other specs and quantity. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2485 p–type Si:B [100] 4″ 3000 P/E 1–100 SEMI Prime, 1Flat, Individual cst, Groups of 7 and 10 wafers PAM2486 p–type Si:B [100] 4″ 3000 P/E 1–30 SEMI, 2Flats, Individual cst PAM2487 p–type Si:B [100] 4″ 3175 P/P 1–10 SEMI Prime, 2Flats, Individual cst, TTV<8μm PAM2488 p–type Si:B [100] 4″ 3175 P/P 1–10 SEMI Prime, 2Flats, Individual cst, [...]

2019-02-19meta-author
GaAs(111) crystal

GaAs(111) crystal wafer PAM XIAMEN offers n type/Si doped, undoped, and p type GaAs(111) crystal wafer: 1.Wafer List GaAs ,Growing Method: VGF (111)A , SI, undoped, 2″ dia x 0.5 mm, 1 sp GaAs ,Growing Method: VGF (111)A , SI, undoped, 4″ dia x 0.55 mm, 1 [...]

2019-04-22meta-author
8″ CZ Silicon Wafer SSP

PAM XIAMEN offers 8″ CZ Silicon Wafer SSP Growth Method: CZ Diameter: 200.0±0.5mm Type/Dopant: P/Boron Orientation: (111) ±0.5° Resistivity: <1Ωcm Notch: SEMI Standard Thickness: 1,000 ±25um TTV <6um Bow <60um Warp <60um Frontside Surface: Polished Backside Surface: Etched Particle ≦[email protected]≧0.3um For more information, send us email at [email protected] and [email protected]

2021-03-18meta-author
2″ Silicon Wafer-14

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 2″ 5000 P/E 3.4-3.7 SEMI Prime, Individual cst n-type Si:P [100] 2″ 40 ±10 P/P 1-3 SEMI Prime, TTV<5μm, in single wafer trays between clean-room sheets, MOQ 5 wafers n-type Si:P [100] 2″ 1000 P/P 1-10 SEMI Prime n-type Si:Sb [100] 2″ 280 P/E 0.01-0.02 SEMI Prime n-type Si:Sb [100] 2″ 1000 P/E 0.005-0.020 SEMI Prime n-type Si:As [100] 2″ 300 P/P 0.001-0.005 SEMI Prime n-type Si:As [100] 2″ 500 P/E 0.001-0.005 SEMI Prime n-type Si:As [100] 2″ 7000 P/E 0.001-0.005 SEMI Prime, Individual cst n-type Si:P [111] 2″ 10000 P/E 46-52 SEMI Prime,  Individual cst n-type Si:P [111] 2″ 10000 P/E 46-52 SEMI Prime,  Individual [...]

2019-03-07meta-author
PSS Patterned Sapphire Substrate Wafer

PAM-XIAMEN offers PSS patterned sapphire substrate for high brightness GaN based LED EPI growing application. The patterned sapphire substrate wafer is to grow a dry etching mask on the sapphire substrate. The mask is engraved by a standard photolithography process. Then, the sapphire is etched by ICP etching [...]

2021-04-28meta-author