GaN Crystal & Epi Template-2

PAM XIAMEN offers GaN Template on Sapphire.

Gallium nitride substrates are matched in lattice constant and thermal expansion properties for epitaxial growth of doped GaN layers needed for fabrication of GaN-based devices. This eliminates stress and defects induced by growing GaN epi-layers on non-nitride substrates such as sapphire or silicon carbide, which increase device fabrication complexity and cost and compromise device performance.

Undoped GaN Template on Sapphire

GaN Template on Sapphire, C plane 5×5 mmx 30 micron Thickness,1sp
GaN Template on Sapphire, R- plane, 5 x 5 mm x 5 micron,1sp
GaN Template on Sapphire, C plane, 10 x 10 mm x 5 micron,1sp
GaN Template on Sapphire, M plane,10 x 10 mm x 5 micron,1sp
GaN Template on Sapphire, C plane,10×10 x0.5 mm , Film: 30 micron Thick
GaN Template on Sapphire (C plane), N type, undoped, 2″x 4- 5 micron,1sp
GaN Template on Sapphire (C plane), N type, undoped, 2″x 5 micron, 2sp
GaN Template on Sapphire (C plane), N type, undoped, 2″x 30 micron,1sp( Production Grade)
Semi-Insulting GaN Template on Sapphire (C plane), N type, undoped, 3″x 5 micron,1sp
GaN Template on Sapphire ( Semi-insulated) 2″x 20 Micron–Production Grade)
GaN Template on Sapphire ( Semi-insulated) 2″x 5 Micron–Research Grade

Doped GaN Template on Sapphire

GaN (0001) Template( N+ ,Si-doped) on Sapphire , 2″x 5um,1sp
GaN (0001) Template( N+ ,Si-doped) on Sapphire, 2″x 5um,2sp
GaN (0001) Template( N-type ,Fe-doped) on Sapphire, 2″x 5um,1sp
Si-doped GaN (0001) Template on Sapphire N+type, 4″x 5 micron,1sp
FLAAT GaN (0001) Template( N+ ,Si-doped) on Sapphire N+ , 2″x 15um,1sp
Mg-doped P-type GaN (0001) Template on Sapphire 10x10x 2 micron,1sp,Doping Concentration: 5E17/cc
Mg-doped P-type GaN (0001) Template on Sapphire 2″x 2 micron,1sp,Doping Concentration: 5E17/cc
Mg-doped P-type GaN (0001) Epitaxial Template on Sapphire 2″x 2 micron,2sp

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

Share this post