PAM XIAMEN offers Nd YAG Nd Doped Yttrium Aluminium Garnet Laser Crystal.
Main Specifications
dimensional tolerance:
Dia:< +/-0.025 mm ,length: < +/-0.5 mm
flatness:
λ/8 @633nm
Surface fineness:
10/5
flatness:
20 arc sec.
verticality:
5 arc min
orientation:
<111> crystalline direction,< +/-0.5°
coating film:
AR coating, HR Coating
reflect:
R<0.2%@1064, HR:R>99.8%@1064,R<5%@808nm,
clear aperture:
>95% central area
wavefront distortion:
<7mm diameter : <λ/8 per inch @ 633nm,
7mm diameter : <λ/10per inch @ 633nm
Publications related to YAG laser crystals:
[1]
J. E. Geusic et al., “Laser oscillations in Nd-doped yttrium aluminum, yttrium gallium and gadolinium garnets”, Appl. Phys. Lett. 4 (10), 182 (1964)
[2]
D. Y. Shen et al., “Highly efficient in-band pumped Er:YAG laser [...]
2019-03-15meta-author
PAM XIAMEN offers Aluminum Oxide Substrate Al2O3.
Aluminum Oxide Ceramic Substrates Porperties
Purity (wt%)
0.96
0.996
0.996
0.999
Density (g/cm3)
> 3.75
3.88
3.87
3.92
Thermal conductivity (W/m. K)
24
34.7
35
35
Thermal Expansion (x10-6/oC)
< 7.7
7~8.3
7~8.3
8.1
Dielectric Strength (Kv/mm)
> 14
23.64
23.64
8.7
Dielectric Constant (at 1MHZ)
9.8
9.9
9.9
9.8
Loss Tangent (x10-4 @1MHZ)
4
1
1
< 1
Volume Resistivity (ohm-m)
> 1013 at [...]
2019-04-18meta-author
Semi-insulating GaAs (gallium arsenide) crystal with low defects and dopants can be offered by PAM-XIAMEN, one of gallium arsenide producers. Semi-insulating GaAs crystal refers that there is excess arsenic during the GaAs crystal growth process, leading to crystallographic defects, which is arsenic antisite defects. [...]
2021-06-28meta-author
GaAs MESFET, HEMT and HBT Competition with Advanced Si RF Technologies
TECHNOLOGIES
The competing technologies on the RF market will be briefly described. The given key figures are oriented to production processes and are no records that are in principle feasible in the technology.
The MESFET (fig. [...]
PAM XIAMEN offers 8″CZ Prime Silicon Wafer
8 inch prime silicon wafer
Orientation CZ <111>
Diameter 200mm
Thickness 1±0.025mm
Total Thickness Variation ≤25μm
Warp ≤50μm
Surface Sigle -side Polished
P type
Resistivity 1-80Ωcm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-10meta-author
PAM XIAMEN offers (112) Orientation Silicon Wafers.
If you don’t see what you need then please email us your specs.
Item
Type/Dopant
Ori
Dia (mm)
Thck (μm)
Surf.
Resistivity Ωcm
Comment
PAM3026
n-type Si:P
[112-5.0° towards[11-1]] ±0.5°
6″
875 ±10
E/E
FZ >3,000
SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips
PAM3027
n-type Si:P
[112-5° towards[11-1]] ±0.5°
6″
1,000 ±10
C/C
FZ >3,000
SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, [...]
2019-02-22meta-author