GaN Epitaxial Technology

GaN Epitaxial Technology

GaN Epitaxial Technology

GaN technology today is important technology player- Gallium Nitride on Silicon Carbide (GaN on SiC), Gallium Nitride on Silicon (GaN on Si) and Gallium Nitride on Sapphire (GaN on Sapphire). They are used in LED, RF and microwave devices. We can see a dilemma in the GaN supply chain compared with GaAs and its life cycle. Cost-sensitive applications will still go the path of GaAs technology.  At the same time, foundries and researchers will service diverse, low-volume applications with specialty GaN processes. GaN on SiC will remain focusing on low-volume, niche applications because of higher cost of substrate material,while GaN on Si has lower efficiency though it has low cost of substrate. However we can see a bloom future due to innovation GaN technology on the road. Here would like to introduce our GaN epitaxial technology as follows:


Customized GaN epitaxy on SiC,Si and Sapphire substrate for HEMTs, LEDs:


No.1 C-plane (0001)GaN on 4H or 6H SiC substrate

1)Undoped GaN buffer or AlN buffer are available;

2)n-type(Si doped or undoped), p-type or semi-insulating GaN epitaxial layers available;

3)vertical conductive structures on n-type SiC;

4)AlGaN – 20-60nm thick, (20%-30%Al), Si doped buffer;

5)GaN n-type layer on 330µm+/-25um thick 2” wafer.

6) Single or double side polished, epi-ready, Ra<0.5um

7)Typical value on XRD:

Wafer ID              Substrate ID                      XRD(102)                    XRD(002)                Thickness

#2153          X-70105033 (with AlN)                 298                            167                         679um


No.2. Alx(Ga)1-xN on SiC Substrate:

1) AlGaN layers, 20-30% Al;

2) Layer thickness 0.2-1 µm;

3) N type or semi-insulating SiC substrate with on-axis are available.


No.3. C-plane (0001) GaN on Sapphire Substrate

1) GaN layer thickness:3-90um;

2) N type or semi-insulating GaN are available;

3) Dislocation Density: <1×10^ 8 cm-2

4) Single or double side polished, epi-ready, Ra<0.5um


No.4. Alx(Ga)1-xN on Sapphire Substrate:

2″ GaN HEMT on Sapphire

Substrate: Sapphire

Nucleation Layer: AlN

Buffer Layer: GaN (1800 nm)

Spacer: AlN (1nm)

Schottky Barrier: AlGaN (21 nm, 20%Al)

Cap: GaN (1.5nm)


No.5. C-plane (0001) GaN on Silicon (111) Substrate

1) GaN layer thickness:50nm-4um;

2) N type or semi-insulating GaN are available;

3) Single or double side polished, epi-ready, Ra<0.5um


No.6. Alx(Ga)1-xN on Silicon (111) Substrate

1) AlGaN layers, 20-30% Al;

2)Typical undoped GaN layer: 2µm thick;

3)Sheet concentration: 1E13/cm3


No.7.Epi GaN on SiC/silicon/sapphire:

Layer4. 50nm p-GaN [2.1017 cm-3]

Layer3. 600nm HR-GaN [1015 cm-3]

Layer2. 2µm n-GaN [2.1018 cm-3]

Layer1. Buffer layer (to be determined)

Layer0. Substrate (can be sapphire, Si or SiC) back side has not been polished



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