GAN HEMT EPITAXIAL WAFERS (GAN EPI-WAFERS)

PAM XIAMEN offers GaN HEMT Epitaxial Wafers.

Gallium Nitride (GaN) epitaxial wafers (epi-wafers). GaN high-electron-mobility transistors (HEMT) wafers on different substrates such as silicon substrate, sapphire substrate, silicon carbide (SiC) substrate.

We sell directly from the factory, and therefore can offer the best prices on the market for high quality GaN HEMT epi-wafers.  Customers from all over the world have trusted PAM XIAMEN Supplies as their preferred supplier of GaN epi-wafers and GaN transistors.

AlGaN/GaN HEMT on 2 in Conductive SiC Wafer (GaN/SiC)
AlGaN/GaN HEMT on 2 in Sapphire Wafer
AlGaN/GaN HEMT on 2 inch Semi-Insulating SiC Wafer (GaN/SiC)
AlGaN/GaN HEMT on 2 inch Si Wafer (GaN/Si)

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system.Test report is provided for each shipment, and each wafer are warranty.

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