GaN HEMT

PAM XIAMEN offers GaN HEMT.

Parmeters Specification
BV 300~650
Vt(ds)(max) 800
Rds(on)max 50~350
If 5~20
Operation temp. -55~150
Qg(typ) 6~14
Vth(typ) 2.1
Package type TO220-3L
TO263/TO252
DFN,QFN

 

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

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