•MOCVD growth of a p-GaN/i-InGaN/n-GaN (PIN) solar cell on ZnO/Sapphire templates.
•In-depth structural characterizations showing no back-etching of ZnO.
•Chemical lift-off and wafer-bonding of the structure on float glass.
•Structural characterizations of the device on glass.
p-GaN/i-InGaN/n-GaN (PIN) structures were grown epitaxially on ZnO-buffered c-sapphire substrates by metal organic vapor phase epitaxy using the industry standard ammonia precursor for nitrogen. Scanning electron microscopy revealed continuous layers with a smooth interface between GaN and ZnO and no evidence of ZnO back-etching. Energy Dispersive X-ray Spectroscopy revealed a peak indium content of just under 5 at% in the active layers. The PIN structure was lifted off the sapphire by selectively etching away the ZnO buffer in an acid and then direct bonded onto a glass substrate. Detailed high resolution transmission electron microscoy and grazing incidence X-ray diffraction studies revealed that the structural quality of the PIN structures was preserved during the transfer process.
A1. Characterization; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B1. Zinc compounds; B3. Solar cells
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