(Al,In)GaN laser diodes with optimized ridge structures

  • Home
  • News
  • (Al,In)GaN laser diodes with optimized ridge structures
(Al,In)GaN laser diodes with optimized ridge structures

 

We develop (Al, In)GaN ridge waveguide laser diodes in the violet-blue spectral region. Varying the indium content of the InGaN quantum wells, we tailor the emission wavelength of our devices for specific applications in the range from 390 nm to 425 nm. Using different commercially available free standing GaN substrates, we adjust the epitaxial design and optimize the processing sequence for the different kinds of substrates. In particular we focus on the ridge formation. We compare different fabrication methods to obtain devices with ridge widths around 2 μm. So far, we have achieved threshold currents around 60 mA and slope efficiencies exceeding 1 W/A.

Source:MENDELEY

If you need more information about (Al,In)GaN laser diodes with optimized ridge structures, please visit our website:  https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com  or powerwaymaterial@gmail.com

 

2013-03-27

Share this post

Related Posts

Overview of Micro-LED History and Current Developments

Overview of Micro-LED History and Current Developments   According to LEDinside’s latest findings, micro-LEDs will enter mass production by 2018. To understand micro-LED technology comprehensively, and tap into its market potential, LEDinside has organized its history, current situation, theory, manufacturing process, and related manufacturers. History The history of micro-LEDs [...]

2016-08-22meta-author
Computer modeling of surface interactions and contaminant transport in microstructures during the rinsing of patterned semiconductor wafers

Computer modeling of surface interactions and contamin Highlights • Dynamics of contaminant removal from the surface of micro/nanotrench is simulated. • The trench is rectangular and made of one or two different materials. • Various diffusivities and surface characteristics are considered in the model. • In multimaterial trench, cleaning dynamics strongly depends on [...]

2014-08-10meta-author , ,
1654nm laser diode wafers

PAM XIAMEN offers 1654nm laser diode wafers. Available Center Wavelengths: 1640nm – 1670nm Wavelength Tolerance: +/- 1nm CW Output Power (typical): 8mW (out of fiber) SMSR (typical): >40 dB Optical Linewidth: < 1.5 MHz Temperature Tuning Coefficient (typical): 0.1 nm/°C Current Tuning Coefficient (typical): 10 pm/mA Slope Efficiency (typical): 0.10 mW/mA For more [...]

2019-03-13meta-author
LSGM single crystal substrate

PAM XIAMEN offers LSGM single crystal substrate. Now LSGM （La 0.95 Sr 0.05 Ga 0.95 Mg 0.05 O 3-δ） single crystal substrate is commercially available from PAM XIAMEN by contract growth via CZ method. LSGM has the advantage of a broad electrolytic domain with [...]

2019-05-10meta-author
Team deploys world’s highest peak-power laser diode arrays

Lawrence Livermore National Laboratory (LLNL) has installed and commissioned the highest peak power laser diode arrays in the world, representing total peak power of 3.2 megawatts (MW). To drive the diode arrays, LLNL needed to develop a completely new type of pulsed-power system, which supplies [...]

2017-07-04meta-author
Single crystal SrLaGaO4

PAM XIAMEN offers Single crystal SrLaGaO4. Single crystal SrLaGaO4, (100), 10×9.8×0.5mm 1sp Single crystal SrLaGaO4, (001), 10x3x0.5mm , one side polished Single crystal SrLaGaO4, (001), 10x5x0.5mm , one side polished Single crystal SrLaGaO4, (100), 10x10x0.5mm 2sp Single crystal SrLaGaO4, (100), 10x3x0.5mm , one side [...]

2019-05-14meta-author