GaN LEDs fabricated using SF6 plasma RIE

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Article title:GaN LEDs fabricated using SF6 plasma RIE

Published by:

Wasif Khan ; Xiaopeng Bi ; Bin Fan ; Wen Li

Department of Electrical and Computer Engineering, Michigan State University , East Lansing, Michigan 48823 , USA

Abstract

In this work, the authors report a cost-effective fabrication method for making gallium nitride (GaN) light emitting diode (LED) arrays using SF6 plasma in a conventional reactive-ion etching (RIE) system. The etch rates for GaN were investigated with different radio-frequency power and carrier substrates. The surface roughness due to the etching was also determined for the various recipes used. The optical intensity and the temperature change during operation of the fabricated LED’s were investigated. The effect of post-fabrication annealing on enhancement in the electrical and optical properties of the LED’s was investigated.

Subject(s): Surface treatment (semiconductor technology); II-VI and III-V semiconductors; Light emitting diodes; Annealing processes in semiconductor technology

Article abstract for Using Wafer from Xiamen Powerway Advanced Material Co. Ltd. (PAM-XIAMEN) or Powerway Wafer Co.,Limited

“… MOCVD grown GaN epi- taxial LED on sapphire wafers (2 inch in diameter) were obtained from Xiamen Powerway Advanced Material Co, China and diced into 1 cm × 1 cm chips. Each LED was 400 µm × 150 µm in dimen- sion …”

Source:https://digital-library.theiet.org/content/journals/10.1049/mnl.2018.5083

About Xiamen Powerway Advanced Material Co., Ltd

Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Now PAM-XIAMEN offer GaN material including GaN substrate, GaN on sapphire, InGaN, InN, and AlN epitaxial wafer with a wide range of deposition rates, various doping levels, wide composition ranges, and low defect densities. As well as GaN based LED wafer and AlGaN/GaN HEMT wafer.

PAM-XIAMEN also offer SiC and GaAs/InP material from wafer substrate to epitaxial growth.

Powerway Wafer Co.,Limited is a sub company of Xiamen Powerway Advanced Material Co., Ltd specialize in dealing with overseas orders.

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