GaN on GaN

GaN on GaN

PAM-XIAMEN offers GaN on GaN wafer, which uses the homogeneous substrate. The main application market of GaN-on-GaN epi wafer is blue/green lasers, which are used in laser display, laser storage, laser lighting and other fields.

1. GaN on GaN Epitaxy Structure

Item 1:

Epitaxial LayerThickness
GaN Cap3nm
AlxGaN 20nm
Buffer layer3um
GaN substrate


Item 2: 2” and 4” GaN Sub (N +) PAM201111-GG 

Layer No.CompositionThickness
1st layerN-GaN10-15μm (Nd-1e15-5e16cm-3)
2nd layerP-GaN0.5-2μm (Na-1e17-1e19cm-3)


Item 3: 2” and 4” GaN Sub (N +) PAM201111-GG 

Layer No.CompositionThickness
1st layerN-GaN10 to 15μm (Nd-1e15 to 5e16cm-3)
2nd layerP-GaN0.2-1μm (Na-1e17-1e19cm-3)
3rd layerP-GaN0.1μm (N4-8e19cm-3)


Item 4: 2” and 4” GaN Sub (N +) PAM201111-GG 

1st layer: N-Gan 10-15μ (Nd1e15-5e16cm-3)


2. About the GaN on GaN Technology

GaN-on-GaN has better heat dissipation performance than GaN-on-SiC HEMT due to the higher thermal conductivity of the GaN epitaxial layer. A GaN substrate thinning process can help heat dissipation in GaN-on-GaN HEMTs.

Growing epitaxial layers on independent GaN is an effective way to reduce dislocation density. The dislocation density of the substrate is 106 cm-2 or less, so that compared with the GaN substrate, the dislocation density of the GaN epitaxial layer on GaN is reduced by at least two orders of magnitude.


For more information, please contact us email at [email protected] and [email protected].

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