GaN on Sapphire for RF

GaN on Sapphire for RF

PAM XIAMEN offers GaN on Sapphire for RF.

1.1 GaN HEMT Structure on Sapphire for RF Application

Wafer size 2”, 3”, 4”, 6”
AlGaN/GaN HEMT structure Refer 1.2
Carrier density 6E12~2E13 cm2
Hall mobility /
XRD(102)FWHM /
XRD(002)FWHM /
Sheet Resistivity /
AFM RMS (nm)of 5x5um2 <0.25nm
Bow(um) <=35um
Edge exclusion  <2mm
siN passivation layer  0~30nm
u-GaN cap layer  /
Al composition 20-30%
In composition 17% for InAlN
AlGaN barrier layer  20~30nm 
AlN spacer  /
GaN buffer layer(um) /
GaN channel /
Fe doped GaN buffer /
Nudeation /
Substrate material Sapphire substrate

 

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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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