PAM XIAMEN offers GaN on Sapphire for RF.
1.1 GaN HEMT Structure on Sapphire for RF Application
Wafer size | 2”, 3”, 4”, 6” |
AlGaN/GaN HEMT structure | Refer 1.2 |
Carrier density | 6E12~2E13 cm2 |
Hall mobility | / |
XRD(102)FWHM | / |
XRD(002)FWHM | / |
Sheet Resistivity | / |
AFM RMS (nm)of 5x5um2 | <0.25nm |
Bow(um) | <=35um |
Edge exclusion | <2mm |
siN passivation layer | 0~30nm |
u-GaN cap layer | / |
Al composition | 20-30% |
In composition | 17% for InAlN |
AlGaN barrier layer | 20~30nm |
AlN spacer | / |
GaN buffer layer(um) | / |
GaN channel | / |
Fe doped GaN buffer | / |
Nudeation | / |
Substrate material | Sapphire substrate |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.