GaN on Sapphire for RF

PAM XIAMEN offers GaN on Sapphire for RF.

1.1 GaN HEMT Structure on Sapphire for RF Application

Wafer size 2”, 3”, 4”, 6”
AlGaN/GaN HEMT structure Refer 1.2
Carrier density 6E12~2E13 cm2
Hall mobility /
XRD(102)FWHM /
XRD(002)FWHM /
Sheet Resistivity /
AFM RMS (nm）of 5x5um2 <0.25nm
Bow(um) <=35um
Edge exclusion  <2mm
siN passivation layer  0~30nm
u-GaN cap layer  /
Al composition 20-30%
In composition 17% for InAlN
AlGaN barrier layer  20~30nm 
AlN spacer  /
GaN buffer layer(um） /
GaN channel /
Fe doped GaN buffer /
Nudeation /
Substrate material Sapphire substrate

 

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

2019-05-17

Share this post

Related Posts

Thermal Oxide Growth Calculator

PAM XIAMEN offers Thermal Oxide. If you don’t see what you need then Please send us email at sales@powerwaywafer.com if you need other specs and quantity. Physical Constants Constant Name Value Density (g/cm3) 2.27 Dielectric Constant 3.9 DC Resistivity @25°C (Ω-cm) 1016 Energy gap (eV) ~9 Thermal conductivity (W/cm2°C) 0.014 Linear expansion coefficient (ppm/°C) 0.05 Refractive index 1.46 Melting Point (°C) ~1700 Molecular weight 60.08 Molecules/cm3 2.3*1022 Specific [...]

2019-02-26meta-author
GaAs Schottky Diode Epitaxial Wafers

GaAs Schottky Diode Epitaxial Wafers   We offer GaAs Epitaxial Wafers for Schottky Diode as follows:   Epitaxial Structure No. Material Composition Thickness Target(um) Thickness Tol. C/C(cm3) Target C/C     Tol. Dopant Carrrier Type 4 GaAs 1.00 ±10% ＞5.0E18 N/A Si N++ 3 GaAs 0.28 ±10% 2.0E17 ±10% Si N 2 Ga1-xAlxAs x=0.50 1 ±10% — N/A — — 1 GaAs 0.05 ±10% — N/A — — Substrate: 2”,3”,4″   Millimeter and submillimeter heterodyne observations will improve our understanding of the universe, the solar system and the Earth atmosphere. Schottky diodes are strategical components [...]

2013-10-14meta-author
P Type GaN Template

P Type GaN Template PAM-XIAMEN Offers p type GaN Template Published on December,27, 2012 Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, today announces mass production of p type Mg doped GaN template. “Now we can offer wide range [...]

2012-12-27meta-author
PAM-XIAMEN Offers InAlAs layer

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InAlAs and other related products and services announced the new availability of size 2”  is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We are [...]

2017-10-25meta-author
4″ Silicon EPI Wafer-3

PAM XIAMEN offers 4″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 20 n- Si:P 7±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 10 n- Si:P 2±0.4 N/N/N+ 4″Øx380μm n- Si:As[111] 0.001-0.005 P/EOx 21 n- Si:P 150 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 22.5 n- Si:P 12±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 28.5 n- Si:P 2±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 26 n- Si:P 18±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 11 n- Si:P 2±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 27 n- Si:P 220 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 27.5 n- Si:P >250 N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 28 n- Si:P 165 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 28 n- Si:P 43688 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 9-11 n- Si:P 43468 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 28 n- Si:P 11±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 8-12 n- Si:P 43468 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 30 n- Si:P 11±10% N/N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 15 n- Si:P 4±10% N/N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 5 n- Si:P 1.5±10% N/N/N/N+ 4″Øx525μm n- [...]

2019-03-08meta-author
CZT α-ray Detector

PAM-P02, the α series energy spectrum detectors are charged particles detector based on CZT crystal in super small size. They can be used in common environment and vacuum environment. For vacuum environment, they have an especially high energy resolution. The detector integrates CZT crystal, visible light [...]

2019-04-23meta-author