GaN on Sapphire for RF

PAM XIAMEN offers GaN on Sapphire for RF.

1.1 GaN HEMT Structure on Sapphire for RF Application

Wafer size	2”, 3”, 4”, 6”
AlGaN/GaN HEMT structure	Refer 1.2
Carrier density	6E12~2E13 cm2
Hall mobility	/
XRD(102)FWHM	/
XRD(002)FWHM	/
Sheet Resistivity	/
AFM RMS (nm）of 5x5um²	<0.25nm
Bow(um)	<=35um
Edge exclusion	<2mm
siN passivation layer	0~30nm
u-GaN cap layer	/
Al composition	20-30%
In composition	17% for InAlN
AlGaN barrier layer	20~30nm
AlN spacer	/
GaN buffer layer(um）	/
GaN channel	/
Fe doped GaN buffer	/
Nudeation	/
Substrate material	Sapphire substrate

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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2019-05-17

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