PAM XIAMEN offers GaN on Sapphire for RF.
1.1 GaN HEMT Structure on Sapphire for RF Application
| Wafer size | 2”, 3”, 4”, 6” |
| AlGaN/GaN HEMT structure | Refer 1.2 |
| Carrier density | 6E12~2E13 cm2 |
| Hall mobility | / |
| XRD(102)FWHM | / |
| XRD(002)FWHM | / |
| Sheet Resistivity | / |
| AFM RMS (nm）of 5x5um2 | <0.25nm |
| Bow(um) | <=35um |
| Edge exclusion | <2mm |
| siN passivation layer | 0~30nm |
| u-GaN cap layer | / |
| Al composition | 20-30% |
| In composition | 17% for InAlN |
| AlGaN barrier layer | 20~30nm |
| AlN spacer | / |
| GaN buffer layer(um） | / |
| GaN channel | / |
| Fe doped GaN buffer | / |
| Nudeation | / |
| Substrate material | Sapphire substrate |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
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