GaN on Si for Power, E-mode

PAM XIAMEN offers GaN on Si for Power, E-mode.

1.1 E-MODE GaN HEMT Structure on Silicon

Wafer size 2″, 4″, 6″,8″
AlGaN/GaN HEMT structure Refer 1.2
Residual 2DEG density (Vg=0 V) <1e18/cm3
AFM RMS (nm)of 5x5um2 <0.25nm
Bow(um) <=30um
Edge exclusion  <5mm
p-GaN /
u-GaN cap layer  /
Al composition 20-30%
AlGaN barrier layer  /
GaN channel /
AlGaN buffer /
Substrate material Silicon substrate
Si wafer thickness (μm) 675um(2″), 1000um(4″), 1300um(6″), 1500um(8″)

 

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system.Test report is provided for each shipment, and each wafer are warranty.

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