GaN HEMT RF Epitxial Wafer on Si substrate, which is a wide bandgap semiconductor, can be offered by PAM-XIAMEN. The GaN HEMT on Si wafer has obvious advantages in the high-power, high-frequency application field. As for the GaN HEMT RF devices, they include PA, LNA, switch, MMIC, etc, which is mainly for base station satellite, radar and other markets.
1. RF GaN HEMT Structure on Silicon
|RF GaN HEMT on Si Wafer size||2″, 4″, 6″,8″|
|AlGaN/GaN HEMT structure||Refer 1.2|
|Carrier density||>9E12 cm2|
|AFM RMS (nm）of 5x5um2||<0.25nm|
|SiN passivation layer||0~5nm|
|u-GaN cap layer||/|
|AlGaN barrier layer||/|
|Substrate material||Silicon substrate|
|Si substrate resistivity (Ω cm)||> 3000|
|Si wafer thickness (μm)||1000um(2″), 1000um(4″), 1300um(6″), 1500um(8″)|
2. About the GaN HEMT RF on Si Epi Wafer
The current industry production yield rate of on Si based GaN HEMT RF wafer is low. However, Si-based GaN HEMT price will be lower than that of SiC-based GaN HEMT because Si material is the most mature, defect-free, and lowest-cost substrate material; at the same time, Si can be expanded to 8-inch wafer fabs to reduce unit production costs.
In the RF PA market, the bandwidth of LDMOS PA will be greatly reduced as the frequency increases. It is only effective in the frequency range not exceeding about 3.5GHz. The frequency of GaN HEMT devices using 0.25 micron process can be as high as 4 times, and the bandwidth can be increased by 20%. The power density can reach 6~8 W/mm (LDMOS is 1~2W/mm), and the trouble-free working time can reach 1 million hours, which is more durable and has obvious advantages in comprehensive performance.