GaN on Si for RF

PAM XIAMEN offers GaN on Si for RF.

1.1 GaN HEMT Structure on Silicon for RF Application

Wafer size 2″, 4″, 6″,8″
AlGaN/GaN HEMT structure Refer 1.2
Carrier density >9E12 cm2
Hall mobility /
Sheet Resistivity /
AFM RMS (nm)of 5x5um2 <0.25nm
Bow(um) <=30um
Edge exclusion  <5mm
SiN passivation layer  0~5nm
u-GaN cap layer  /
Al composition 20-30%
AlGaN barrier layer  /
GaN channel /
AlGaN buffer /
AlN /
Substrate material Silicon substrate
Si substrate resistivity (Ω cm) > 3000
Si wafer thickness (μm) 1000um(2″), 1000um(4″), 1300um(6″), 1500um(8″)

 

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

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