PAM XIAMEN offers GaN on Si for RF.
1.1 GaN HEMT Structure on Silicon for RF Application
|Wafer size||2″, 4″, 6″,8″|
|AlGaN/GaN HEMT structure||Refer 1.2|
|Carrier density||>9E12 cm2|
|AFM RMS (nm）of 5x5um2||<0.25nm|
|SiN passivation layer||0~5nm|
|u-GaN cap layer||/|
|AlGaN barrier layer||/|
|Substrate material||Silicon substrate|
|Si substrate resistivity (Ω cm)||> 3000|
|Si wafer thickness (μm)||1000um(2″), 1000um(4″), 1300um(6″), 1500um(8″)|
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.